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Y.F. Chen, Crystalline SiCN with a direct optical band gap of 3.8eV, U.S. patent 5935705 (1999)
- Y.F. Chen, A new wide-band gap semiconductor: SiCN, ROC patent 451499 (2001)
- W.F. Su, Y.F. Chen, M.C. Wu, C.M. Chuang, and Y.C. Huang, ¡§Nanolithography made from dual function water base magnetic LSMO resist,¡¨ Taiwan Patent (2006)
- Y.F. Chen, ¡§Electrode structure and solar cell applying the same¡¨, Taiwan Patent: TWM361106 (2009)
- Y.F. Chen, ¡§Electrode structure and solar cell applying the same¡¨ Japan patent: JP3154145 (2009)
- Y.F. Chen, ¡§Positive and negative dual function magnetic resist lithography¡¨, US patent¡GUS7598022, (2009)
- Y.F. Chen, ¡§Electrode structures for solar cells¡¨, Taiwan patent: TWM387372(2010)
- Y.F. Chen, ¡§Solar cells and their electrode structures¡¨, Taiwan patent: TWM393802(2010)
- Y.F. Chen, ¡§Solar cells and their rear side electrode structures¡¨, Taiwan patent (2010)
- Y.F. Chen, ¡§Electrode structures of double printing for solar cells¡¨, China patent (2010)
- Y.F. Chen, ¡§Solar Cell Having Scatter On Grid ¡¨, Taiwan patent: TWM400097(2011)
- Y.F. Chen, ¡§Photovoltaic Device and Backside Electrode Structure Therefore¡¨, Taiwan patent: TWM396489(2011)
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