¡@ Education & Career Experience Academic Achievements Honors and awards Service to the community Courses taught or developed at National Taiwan University Current research interests publications

¡@ Curriculum Vitae¡GYang-Fang Chen 1. Current Position Professor of Department of Physics, National Taiwan University, Taipei, Taiwan Tel¡G(02) 3366-5125 Fax¡G(02) 2363-9984 Email¡Gyfchen@phys.ntu.edu.tw 2. Date of birth July 2, 1953 3. Home address 7-1, Lane 7, Tsin-Tien Street, Taipei, Taiwan 4. Marital status and children Married to Ih-Lin Chen. Three children, Joanna Chen (born 1986), Alice Chen (born 1990), and Allen Chen (born 1991). 5. Education B. S. in Physics, National Tsing-Hua University, Taiwan 1976 Ph. D. in Physics, Purdue University, USA 1984 6. Career Experience Professor at National Taiwan University, Department of Physics. 1991-Present Associate Professor at National Taiwan University, Department of Physics. 1986-1991 Post Doctoral Member of Division of Applied Science at Harvard University, USA 1984-1986 7. Academic Achievements 1. First observation of photon-momentum and magnetic-field reversal on the spin resonance in InSb. (1983) 2. Development of the theory of interference of electric-dipole and magnetic-dipole interactions in zinc-blende structure. (1984) 3. Demonstration and elimination of light-induced effect in a-Si:H. (1988) 4. Development of the theory of magnetoelectric effect due to spin resonance in Zinc-blende semiconductors. (1989) 5. Development and first demonstration of hydrogen passivation in semiconductors by photochemical vapor deposition system. (1990) 6. First demonstration of the effects of hydrogen passivation in CdZnTe and HgCdTe. (1991) 7. Discovery and development of the theory of the connection between the Meyer-Neldel rule and stretched-exponential relaxation. (1991) 8. First demonstration of the pumping power dependence of Fermi enhancement of the luminescence spectra in GaAs/AlGaAs quantum wells. (1992) 9. Invention and first demonstration of photothermal luminescence spectroscopy in GaAs/AlGaAs quantum wells. (1993) 10. First observation of the quantum confinement of acoustic phonon in GaAs/AlGaAs quantum wells by photothermal luminescence spectroscopy. (1993) 11. First demonstration of quantum confinement effects in strained SiGe/Si quantum wells at room temperature. (1993) 12. First compete Raman-scattering measurement and analysis of the whole range of InGaAs alloys. (1994) 13. First observation and analysis of persistence photoconductivity in SiGe/Si quantum wells. (1995) 14. Application of optically detected cyclotron resonance to InAlAs/InGaAs heterojunction bipolar transistors. Demonstration of the enhancement of the electron effective mass in HBT. (1995) 15. Demonstration of the deposition of highly crystalline quality ZnSe films by pulsed laser deposition. (1995) 16. First complete study of the dependence of electron effective mass on alloy composition of InGaAs, InAlGaAs, and InAlGaP alloys. Establishment of the importance of alloy disorder on the enhancement of effective mass. (1995) 17. First observation of double cyclotron resonance in InAlAs/InGaAs heterostructure by optical detection. (1996) 18. Discovery of the anomalous temperature dependence in C60 single crystal. (1996) 19. Demonstration of the effects of band offset and nonparabolicity on the effective mass in AlInAs/InGaAs heterostructures. (1997) 20. First demonstration of persistent photoconductivity in n-type GaN. (1997) 21. First fabrication of ZnSe quantum dots under Volmer-Weber mode by MOCVD. (1997) 22. Development of the origin of yellow luminescence in GaN. (1997) 23. First demonstration of above-barrier confinements in GaAs/AlGaAs quantum wells by photoconductivity measurements. (1997) 24. Growth of the largest SCN single crystal which is a new wide band gap material. (1997) 25. First observation of persistent photoluminescence in porous silicon which provides an evidence for surface emission. (1998) 26. First demonstration of Coulomb staircases in As dots in low-temperature grown GaAs. (1998) 27. Demonstration of the effect of hydrogen passivation in InGaP/AsAs heterostructures. (1999) 28. Demonstration of the phase transition at temperature higher than 400C in C60 films. (1999) 29. First study of positive and negative persistent photoconductivity in InGaAs/InAlAs quantum wells. (1999) 30. First demonstration of strong and stable visible luminescence from Au-passivated porous silicon. (1999) 31. Discovery of optical quenching phenomenum in GaN films. (2000) 32. Demonstration of field emission behavior of SiCN nanorods. (2000) 33. Establishment of luminescence mechanism in InGaN/GaN quantum wells. (2000) 34. Establishment of photoluminescence mechanism in InAsN/InGaAs quantum wells. (2000) 35. Discovery of the nature of the 2.8eV photoluminescence band in GaN (2000) 36. First observation of persistent photoconductivity in InGaN/GaN quantum wells. (2001) 37. First demonstration of dielectric studies can serve as a very useful measurements for dilute magnetic semiconductors. (2001) 38. First observation of zone-folding of optical phonon in GaN/AlGaN quantum wells. (2001) 39. First observation of above barrier confinement in semiconductor heterostructures at room tempermtum. (2001) 40. Establishment of magnetic field dependence of electron effective mass in GaN/AlGaN heterojunction. (2001) 41. Establishment of the nitrogen-induced enhancement of effective mass in InAsN (2002). 42. Establishment of mechanism of enhanced luminescence in InAlGaN alloys (2002). 43. Discovery of nondegrading photoluminescence in porous silicon by deuterium plasma treatment (2002). 44. Establishment of the determination of degree of ordering in semiconductors by Raman scattering (2002). 45. Discovery of giant polarized optical properties in type II GaAs/GaAs Sb multiple quantum wells (2002). 46. Establishment of microwave modulated SdH oscillations (2003). 47. Discovery of persistent photoconductivity in InAlGaN film (2003). 48. Discovery of photo elastic effects in InGaN/GaN quantum wells (2003). 49. First investigation of anharmonicity in ZnBeSe films by Raman scattering (2003). 50. Discovery of band-gap dependence of field emission from one-dimensional nanostructures grown on p or n-type substrates (2003). 51. First synthesis of core-shell GaN and GaP nanowires (2003). 52. Discovery of novel optical properties of type II quantum wells (2004). 53. Determine the precise effective mass of InN epifilms (2004). 54. Develop a simple and low cost method to fabricate periodic semiconductor arrays (2004). 55. Develop a simple thermally-stimulated current method to study electronic states in quantum dots (2004). 56. Discovery of direct evidence of nanocluster luminescence in InGaN (2005). 57. Design and fabricate photonic srystals to enhance optical properties of CdSe pillars (2005). 58. Discovery of the excellent field emission properties of RuO2 nanorods (2005). 59. Discovery of zero-field spin-splitting in nitride heterostructures (2005). 60. Develop a new technique called light induced electrostatic force microscope, which is very useful for the study of local defects (2006). 61. Discovery of giant enhancement of luminescence induced by second-harmonic surface plasmon resonance (2006). 62. Discovery of enhancement of band gap emission stimulated by defect loss (2006). 63. Develop electrically controlled surface plasmon resonance (2006). 64. Discovery of photoelastic effects in semiconductor nanostructures (2007). 65. Develop liquid crystal devices with built-in semiconductor nanowires for smart emission devices (2007). 66. Discovery of current and strain-induced spin generation in nitride semiconductors (2007). 67. Develop flexible energy transfer devices based on semiconductor quantum dots and PDMS films (2008). 8. Honors and awards 1. Received outstanding research award of National Science Council of Republic of China. (1997-1998, 1995-1996, 1994-1995) 2. Distinguished research fellow of National Science Council of Republic of China. (1998-2004) 3. Received the Sun Yet-Sen Academic Prize. (1994) 4. The best paper award of Chinese Physical Society of Republic of China. (1994) 5. Listed in ¡§Who¡¦s Who in Science And Engineering, 3^rd Edition¡¨ published by Marquis Who¡¦s Who. (1995) 6. Invited by the Royal Swedish Academy of Sciences to nominate the Nobel Prize in Physics for 1998. 7. Listed in ¡§The Barons 500, leaders for the new century¡¨ (2000) 8. Invited Author of Nanotechnology Encyclopedia. (2000) 9. Guest Editor of Journal of Chemistry and Physics of Solids. (2000-2001) 10. Received National Lecture Chair of Ministry of Education of Republic of China. (2001) 11. Received the outstanding award of the Foundation of Hou King-Te. (2001) 12. Research results selected in widely distributed books published by Academic Press. (2001) 13. Paper abstract selected and published in popular magazine (Compound Semiconductors, (2001). 14. Fellow of Chinese Physical Society (2002) 15. Fellow of World Innovation Foundation (2002) 16. Invited as the member of advisory committee for international conference (2003, 2004) 17. Referee of scientific journals including Phys. Rev. Lett. Phys. Rev, Appl. Phys. Lett. J. Appl. Phys¡K.etc. 18. Invited to write review article by the Jurnal of Nanotechnology. (2005) 19. Outstanding teacher award. (2001, 2003, 2005) 20. Distingished professor and chair professor of National Taiwan University (2006-2007). 21.TSMC research award (first prize, 2007). 9. Service to the community 1. Panel for physics division of National Science Council of ROC. (1991-1994) 2. Coordinator of Panel for physics division of National Science Council of ROC. (1994-1996) 3. Consultant of Physics division of National Science Council of ROC. (1996-1999) 4. Editor (1987-1989), Associate Editor-in-Chief (1996-1997), and Editor-in Chief of Physics Bimonthly, published by Chinese Physical Society. 5. Executive Councillor (1991-1995), President-Elect (1996), President (1997) of Chinese Physical Society. 6. Editor (1991-present), Editor in Chief (1996-1997), Editor-in Chief (1998-1999) of Chinese Journal of Physics published by Chinese Physical Society. 7. Editor of Proceeding of Science and Technology published by National Science Council of ROC. (1997-present) 8. Editor of Physics and Chemistry for junior high school. (1997-present) 9. Teacher of the students of International Physics Olympiads. (1998-present) 10. Editor of Physics Dictionary published by National Compilation and Translation Institute (2003- present). 11. Committee member of Physics Promotion Center (2005-2008). 12. Committee member of National Project of advanced science for High School (2005-present). 13. Committee member of Educational Program for Nanoscale Science and Technology (2008-present). 10. Courses taught or developed at National Taiwan University l Undergrad. course ¡§General Physics¡¨ l Undergrad. course ¡§Quantum Physics¡¨ l Undergrad. course ¡§Introduction of Nanoscience and Technology¡¨ l Undergrad. course ¡§Introduction of Solid State Physics¡¨ l Undergrad. course ¡§Physics and Human Civilization¡¨ l Graduate course ¡§Semiconductor Physics¡¨ l Graduate course ¡§Research Seminar¡¨ l Other course ¡§Master Thesis¡¨, ¡§Dissertation¡¨ 11. Students Graduated as Major Research Advisor at National Taiwan University Ph.D.¡G21 graduated students Master¡G103 graduated students 12. Current research interests 1. Fabrication and characterization of III-V and II-VI compound quantum dots. 2. Studies of GaN, InGaN, AlGaN, InAsN based alloys and quantum structures. 3. Magneto-optical properties of semiconductors. 4. Design, synthesis, and characterization of nanocomposite materials based on semiconductors. 5. Spin generation and detection based on semiconductor nanostructures. 6. Coupling between plasmonics, photonic crystals, and semiconductors. 13. Patent Right 1. Crystalline SiCN with a direct optical band gap of 3.8 eV, U.S. Patent 53935705, Aug. 10,1999~2014 2. A New Wide-band gap semiconductor: SCN, ROC Patent 541499, Aug. 21, 2001~2016 ¡@ ¡@