|
A. Reference Papers
B. Presentation at Professional Conferences
C. Invited Talks at Professional
Conferences
A.
Reference Papers:
|
1
|
M. Dobrowski, Y.F. Chen, J.K.
Furdyna, “Effects of Photon-Momentum and
Magnetic-Field Reversal on the Far-Infrared Electric-Dipole Spin Resonance
in InSb”, Phys. Rev. Lett., 51, 134, (1983)
|
|
2
|
Y.F. Chen, M. Dobrowski, J.K.
Furdyna, “G-Factor Anisotropy of Conduction
Electrons in InSb”, Phys. Rev. B, 31, 7989, (1985)
|
|
3
|
Y.F. Chen, M. Dobrowski, J.K,
Furdyna, “Interference of Electric-Dipole and
Magnetic-Dipole Interactions in Conduction Electron Spin Resonance in InSb”, Phys. Rev. B, 32, 890, (1985)
|
|
4
|
Y.F. Chen, Y.S. Huang, “Determination of Density of Gap State Distribution in a-Si:H by
Light-induced Effect”, J. Appl. Phys. 62, 1514,
(1987).
|
|
5
|
Y.F. Chen, Y.S. Huang, “An Explaination of Optically Excess Conductivity in Compansated
a-Si:H”, J. Appl. Phys. 62, 2578 , (1987).
|
|
6
|
Y.S. Huang, Y.F. Chen, “Electronic Structure Study of RuS2”,
Phys. Rev. B, 38, 7997, (1988).
|
|
7
|
Y.F. Chen, “Elimination of Light-induced Effect in a-Si:H”, Appl. Phys. Lett., 53, 1277, (1988).
|
|
8
|
Y.F. Chen, C.C. Wang, P.K.
Tseng, J.J. Lue, “Investigation of Defects in
Amorphous Silicon Films Using Positron Annihilation”, Phys. Lett. A, 134, 493, (1989)
|
|
9
|
Y.F. Chen, “Assessment on the Determination of Density of Gap States in
Hydrogenated Amorphous Silicon from Space-Charge-Limited Current”, Phys. Status. Solidi. (b), 153, 695 (1989)
|
|
10
|
Y.F. Chen, “Magnetoelectric Effect in Conduction-Electron-Spin-Resonance in
Zinc-blende Semiconductors”, Phys. Rev. B, 40, 1959
(1989)
|
|
11
|
Y.F. Chen, “Association of 2100
cm-1 infrared spectra with microstructure in hydrogenated
amorphous silicon”, Solid State Commun., 71, 1127
(1989)
|
|
12
|
Y.F. Chen, “Streched-exponential law for carrier capture kinetics of a
trapping center in compensated amorphous silicon”,
Phys. Rev. B, Rapid Communication, 40, 3437 (1989)
|
|
13
|
Y.F. Chen, C.K. Wong, “Microscopic model of metastable changes in hydrogenated
amorphous silicon”, Phys. Status. Solidi. (b), 157,
101 (1990)
|
|
14
|
Y F. Chen, “Interference of magnetic-dipole and electric-dipole interactions
in semiconductors”, Chinese J. Phys., 28, 79 (1990)
|
|
15
|
Y.F. Chen, C.S. Tsai, Y.H.
Chang, “Photoluminescence study of hydrogen
passivation in GaAs and AlGaAs by photochemical vapor deposition system”, Appl. Phys. Lett., 57, 70 (1990)
|
|
16
|
Y.F. Chen, “Anisotropy of spin-resonance position in p-type InSb inversion
layer”, Solid State Commun., 76, 839 (1990)
|
|
17
|
Y.F. Chen, “Persistent photoconductivity in doping modulate amorphous silicon
multilayers”, Phys. Status. Solidi. (b), 160, K103
(1990)
|
|
18
|
J.J. Lin, T.M. Chen, and Y.F.
Chen, “Structural and superconductiviting
properties of YBa2(Cu1-xAgx)3O7 with X ³ 0.20”,
Solid State Commun., 76, 1285 (1990)
|
|
19
|
Y.F. Chen, C.S. Tsai, Y.
Chang, I.M. Chang, and I.K. Chen, Y.M. Pang, “Hydrogen
passivation in Cd1-xZnxTe studied by photoluminescence”, Appl. Phys. Lett., 58, 493 (1991)
|
|
20
|
Y.F. Chen, W.S. Chen, S.H.
Huang and F.Y. Juang, “Photoluminescence studies of
hydrogen passivation of GaAs grown on InP substrates by molecular beam
epitaxy”, J.Appl. Phys., 69, 3360(1991)
|
|
21
|
Y.F. Chen, “Reaction mechanisms for shallow impurities in hydrogenated
crystalline silicon”, Chinese J. Phys., 29, 245
(1991)
|
|
22
|
Y.F. Chen, S.C. Lee, J.H.
Chen, “Existence of a universal low-energy tail in
the photoluminescence of a-Si1-xCx:H alloys”, Solid
State Commun., 79, 175 (1991)
|
|
23
|
Y.F. Chen and W.S. Chen, “Influence of hydrogen passivation on the infrared spectra of
Hg0.8Cd0.2Te”, Appl. Phys. Lett., 59, 703 (1991)
|
|
24
|
Y.F. Chen, S.F. Huang, and
W.S. Chen, “Kinetics of optically generated defects
in hydrogenated amorphous silicon”, Phys. Rev. B,
44, 12748 (1991)
|
|
25
|
Y.F. Chen, and S.F. Huang, “Connection between the Meyer-Neldel rule and
stretched-exponential relaxation”, Phys. Rev. B,
Rapid Commun., 44, 13775 (1991)
|
|
26
|
Y.F. Chen, K.C. Sung, W.K.
Chen, and Y.S. Lue, “Effect of hydrogenation on
deep-level traps in InP on GaAs”, J. Appl. Phys.,
71, 509 (1992)
|
|
27
|
Y.F. Chen, and J.L. Shen, “Cyclotron Resonance in Quasi-two-dimensional electron systems in
the quantized Hall region”, Phys. Status. Solidi.
(b), 170, K103 (1992)
|
|
28
|
D.W. Liu, X.M. Xu, and Y.F.
Chen, “Picosecond photoluminescence nonlinearity of
two-dimensional Plasma in GaAs-(Al0.3Ga0.7As) multiple quantum wells”, J. Lumin., 54, 23 (1992)
|
|
29
|
Y.F. Chen, L.Y. Lin, J.L.
Shen, and D.W. Liu, “Optical study of high density
two dimensional electron gas in GaAs/Al0.3Ga0.7As modulation-doped quantum
wells”, J. Appl. Phys., 72, 647 (1992)
|
|
30
|
Y.F. Chen, L.Y. Lin, J.L.
Shen, and D.W. Liu, “Fermi Enhancement and
breakdown of the parity selection rule in the luminescence spectra of GaAs/AlxGa1-xAs
modulation-doped quantum wells”, Phys. Rev. B, 46,
12433 (1992)
|
|
31
|
Y.H. Chang, T.C. Chen, C.J.
Chen, and Y.F. Chen, “Magnetophotoconductivity
studies of D0 and D- centers in GaAs quantum wells in metallic and
insulating states”, Phys. Rev. Lett., 69, 2256
(1992)
|
|
32
|
T.Y. Lin, Y.F. Chen, W.K.
Chen, and Y.S. Lue, “Effects of hydrogenation on
electrical properties of InP on GaAs by the photochemical vapor deposition
system”, Mater. Chem. Phys., 33, 76 (1993)
|
|
33
|
Y.F. Chen, J.L. Shen, L.Y. Lin
and Y.S. Huang, “Photothermal luminescence
spectroscopy of GaAs/Ga1-xAlxAs quantum wells”, J.
Appl. Phys. 73, 4555 (1993)
|
|
34
|
Y.F. Chen, “Role of bonded interstitial hydrogen in hydrogented amorphous
silicon: A new perspective”, Chinese J. Phys., 31,
445 (1993)
|
|
35
|
C.J. Chen, Y.H. Chang, T.C.
Chen, S.H. Li, Y.F. Chen, and H.H. Lin, “Effect of
hydrogen passivation on lightly n-type GaAs”,
Mater. SCI Forum., Vol. 117-118, 429 (1993)
|
|
36
|
Y.F. Chen, Y.T. Dai, H.P. Chou,
D.C. Chang, and C.Y. Chang, “Observation of quantum
confinement effects in strained Si0.84Ge0.16/Si quantum wells at room
temperature”, Appl. Phys. Lett., 62, 2713 (1993)
|
|
37
|
Y.F. Chen, J.L. Shen, and Y.H.
Chang, “Cyclotron-resonance-induced negative
photoconductivity in GaAs/AlxGa1-xAs quantum wells”,
Solid State Commun., 88, 337(1993)
|
|
38
|
I.M. Chang, S.J. Pang, Y.F.
Chen, “Light induced degradation on porous silicon”, Phys. Rev. B, 48, 8747 (1993)
|
|
39
|
C.H. Lin, S.C. Lee, and Y.F.
Chen, “Strong room-temperature photoluminescence of
hydrogenated amorphous silicon oxide and its correlation to porous silicon”, Appl. Phys. Lett., 63, 902 (1993)
|
|
40
|
M.Y. Tsay, Y.S. Huang, and
Y.F. Chen, “Photoconduction of synthetic pyrite
FeS2 single crystals”, J. Appl. Phys., 74, 2786
(1993)
|
|
41
|
S.Z. Chang, J.L. Shen, S.C.
Lee, Y.F. Chen, “The material and electrical
properties of highly mismatched InxGa1-xAs on GaAs by molecular beam
epitaxy”, J. Appl. Phys., 74, 6912 (1993)
|
|
42
|
S.C. Pan, Y.F. Chen, D.C.
Chang, C.Y. Chang, and P.J. Wang, “Enhancement of
band-edge luminescence in hydrogenated strained Si0.84Ge0.16/Si quantum
wells by photothermal vapor deposition”, Chinese J.
Phys.,31, 759 (1993)
|
|
43
|
Y.F. Chen, Y.T. Dai, H.P. Chou,
and I.M. Chang, “Photoinduced absorption studied by
photothermal deflection spectroscopy: its application to the determination
of the energy of dangling-band states in a-Si:H”,
Chinese J. Phys., 31, 767 (1993)
|
|
44
|
D.W. Liu, X.M. Xu, and Y.F.
Chen, “Photoluminescence excitation correlation
spectroscopic study of high density two-dimensional electron gas in
GaAs/Al0.3Ga0.7As modulation-doped quantum wells”,
Phys. Rev. B, 49, 4640 (1994)
|
|
45
|
A. Twardowski, K.C. Yu, F.R.
Che., S.S. Kuo, C.S. Ro, K.C. Chiu, W.C. Chou, S.L. Yang, D.S. Chuu, and
Y.F. Chen, “Valence Band Crystal Field Splitting of
Hexagonal Diluted Magnetic Semiconductors”, Phys.
Status. Solidi. (b), 181, 439 (1994)
|
|
46
|
C.H. Lin, S.C. Lee, and Y.F.
Chen, “Morphologies and Photoluminescence Mechanism
of Porous Silicon under Different Etching and Oxidation Conditions”, J. Appl. Phys., 75, 7728 (1994)
|
|
47
|
T.C. Chang, C.Y. Chang, T.G.
Jung, P.A. Chen, W.C. Tsai, P.J. Wang, Y.F. Chen, and S.C. Pan, “Quantum Confinement effects of Si/SiGe strained-layer
superlattices grown by an ultrahigh vacuum chemical vapor deposition
technique”, J. Mater. Sci-Mater. El., 5, 370 (1994)
|
|
48
|
J.L. Shen, I.M. Chang, Y.M.
Shu, Y.F. Chen, S.Z. Chang, and S.C. Lee, “Raman-line-shape
study of InxGa1-xAs on InP and GaAs substrates”,
Phys. Rev. B, 50, 1678 (1994)
|
|
49
|
Y.S. Yuang, Y.F. Chen, Y.Y.
Lee, and L.C. Lin, “Photothermal deflection and
Photoluminescence studies of CdS and CdSe quantum dots”, J. Appl. Phys. 76, 3041 (1994)
|
|
50
|
A. Twardowski, Y.F. Chen, W.
C. Chou, and Demianiuk, “The d-d exchange
interaction in the diluted magnetic semiconductor Cd1-xFexS”, Solid State Commun., 90, 493 (1994)
|
|
51
|
Y.F. Chen, J.L. Shen, I.M.
Chang, S.Z. Chang, and S.C. Lee, “Photoluminescence
study of highly mismatched In0.53Ga0.47As epilayers grown on InP coated
GaAs substrates”, J. Appl. Phys., 77, 1040 (1995)
|
|
52
|
I.M. Chang, G.S. Chuo, D.C.
Chang, and Y.F. Chen, “The evolution of
photoluminescence of porous silicon under light exposure'' J. Appl. Phys.,
77, 5365 (1995)
|
|
53
|
L.H. Chu, Y.F. Chen, D.C.
Chang, and C.Y. Chang, “The long-term relaxation
and build-up transient of photoconductivity in Si1-xGex/Si quantum wells”, J. Phys-Condens. Mat. 7, 4525 (1995)
|
|
54
|
Y.F. Chen, J.L. Shen, Y.D.
Dai, G.J. Jan, and H.H. Lin, “Study of
InAlAs/InGaAs heterojunction bipolar-transistor layers by optically
detected cyclotron-resonance”, Appl. Phys. Lett.
66, 2543 (Vol. 67, 727) (1995)
|
|
55
|
J.L. Shen, Y.D. Dai, Y.F.
Chen, S. Z. Chang, and S. C. Lee, “Cyclotron-resonance
studies in relaxed InxGa1-xAs (0<x<1) epilayers”, Phys. Rev. B, 51, 17648 (1995)
|
|
56
|
M.Y. Chern, H.M. Lin, C.C.
Fang, J.C. Pan, and Y.F. Chen, “Highly crystalline
quality ZnSe films grown by pulsed laser deposition”, Appl. Phys. Lett., 67, 1390 (1995)
|
|
57
|
Y.F. Chen, Y.T. Dai, J.C. Fan,
T.L. Lee, and H.H. Lin, “Dependence of electron
effective mass on alloy composition of InAlGaAs lattice matched to InP
studied by optically detected cyclotron resonance”,
Appl. Phys. Lett., 67, 1256 (1995)
|
|
58
|
Y.F. Chen, J.L. Shen, Y.D.
Dai, and F.F. Fang, “Observation of spin-splitting crossing
between subbands in the optically detected cyclotron-resonance spectra of
In0.53Ga0.47As/In0.52Ga0.48As heterojunctions”,
Phys. Rev. B, 52, 4692 (1995)
|
|
59
|
Y.F. Chen, W.C. Chou, A.
Twardowski, “Spin-glass-like behaviour of Fe-based
diluted magnetic semiconductors”, Solid State
Commun., 96, 865 (1995)
|
|
60
|
J.W. Chen, J.C. Wang, and Y.F.
Chen, “Capacitance studies of Nd2CuO4”,
Chinese J. Phys., 34, 583 (1996)
|
|
61
|
J.W. Chen, J.C. Wang, and Y.F.
Chen, “Dielectric properties of Y2Cu2O5+δ”, Chinese J. Phys., 34, 693 (1996)
|
|
62
|
Y.F. Chen, Y.T. Dai, and I.Lo,
“Observation of double cyclotron resonance in
modulation-δ-doped In0.52Al0.48As/In0.53Ga0.47As
heterostructure by optical detection”, Appl. Phys.
Lett., 68, 1117 (1996)
|
|
63
|
C.C. Huang, I.M. Chang, Y.F.
Chen, and P.K. Tseng, “Observation of Positron
trappimg and air condensation in porous silicon by angular correlation
annihilation radiation”, Physica B, 228, 374 (1996)
|
|
64
|
W.C. Chou, S.S. Kuo, F.R. Chen,
A. Twardowski, and Y.F. Chen, “Exchange disorder
band bending of the Cd1-xFexS diluted magnetic semiconductor”, Phys. Status. Solidi. (b), 193, 125 (1996)
|
|
65
|
J.C. Fan and Y.F. Chen, “Effect of disorder-induced band mixing on the conduction-band effective
mass of InAlGaAs alloys lattice matched to InP”, J.
Appl. Phys., 80, 1239 (1996)
|
|
66
|
I.M. Chang, J.C. Fan, and Y.F.
Chen, “Study of the photoluminescence instability
of porous silicon under light illumination”, Solid
State Commun., 100, 157 (1996)
|
|
67
|
Y.T. Dai, Y.H. Chang, T.F.
Lee, Y.F. Chen, F.F. Fang, and W.I. Wang, “Optically
detected cyclotron resonance studies of mulisubband In0.52Al0.48As
/In0.53Ga0.47As quantum wells”, J. Phys. D Appl.
Phys., 29, 3089 (1996)
|
|
68
|
K.C. Chiu, J.S. Wang, Y.T.
Dai, and Y.F. Chen, “Anomalous temperature
dependence of persistent photoconductivity in C60 single crystal”, Appl. Phys. Lett., 69, 2665 (1996)
|
|
69
|
I. Lo, J.P. Cheng, Y.F. Chen,
and W.C. Mitchel, “Effective mass of two-dimensional
electron gas in δ-doped Al0.52In0.52As/Ga0.47In0.53As quantum wells”, J. Appl. Phys., 80, 3355 (1996)
|
|
70
|
J.C. Fan and Y.F. Chen, “Enhancement of conduction-band effective mass in III-V
semiconductor alloys induced by chemical disorder”,
J. Appl. Phys., 80, 6761 (1996)
|
|
71
|
T.C. Chang, W.K. Yen, Y.J.
Mei, W.C. Tsai, C.Y. Chang, and Y.F. Chen, “Light
emission from the ordered and disordered Si/SiGe superlattices”, Opt. Quant. Electron., 28, 1295 (1996)
|
|
72
|
C.F. Li, D.Y. Lin, Y.S. Huang,
Y.F. Chen, and K.K.Tiong, “Temperature dependence
of quantized states in an In0.86Ga0.14As0.3P0.3/InP quantum well
heterostructure”, J. Appl. Phys. 81, 400 (1997)
|
|
73
|
Y.T. Dai, Y.F. Chen, and I.
Lo, “Effects of band offset and nonparabolicity on
the effective mass of two-dimensional electron gas in modulation-δ-doped GaInAs-based heterostructures”,
Phys. Rev. B, 55, 5235 (1997)
|
|
74
|
H. M. Chen, Y.F. Chen, M.C.
Lee, and M.S. Feng, “Persistent photoconductivity
in n-type GaN”, J. Appl. Phys., 82, 899 (1997)
|
|
75
|
M.C. Liao, Y.H. Chang, and
Y.F. Chen, “Fabrication of ZnSe quantum dots under
Volmer-Weber mode by metalorganic chemical vapor deposition”, Appl. Phys. Lett., 70, 2256 (1997)
|
|
76
|
Y.T. Dai, Y.T. Liu, R.M. Lin,
M.J. Liao, Y.F. Chen, S.C. Lee, and H.H. Lin, “Photoluminescence
and photothermal deflection spectroscopy of InAs quantum dot superlattices
grown on GaAs by molecular beam epitaxy”, Jpn. J.
Appl. Phys., 36, L811 (1997)
|
|
77
|
J.W. Chen, J.C. Wang, and Y.F.
Chen, “Study of dielectric relaxation behavior in
Nd2CuO4”, Physica C, 289, 131 (1997)
|
|
78
|
D.Y. Lin, C.F. Li, Y.S. Huang,
Y.C. Jong, Y.F. Chen, L.C. Chen, C.K. Chen, K.H. Chen, and D.M. Bhusari, “Temperature dependence of the direct band gap of Si-containing
carbon-nitride crystalline films”, Phys. Rev. B, 56, 6498 (1997)
|
|
79
|
H.M. Chen, Y.F. Chen, M.C.
Lee, and M.S. Feng, “Yellow luminescence in n-type
GaN epitaxial films”, Phys. Rev. B, 56, 6942 (1997)
|
|
80
|
Y.T. Dai, J.C. Fan, and Y.F.
Chen, “Temperature dependence of photoluminescence
spectra in InAs/GaAs quantum dot superlattices with large thicknesses”, J. Appl. Phys., 82, 4489, (1997)
|
|
81
|
J.C. Fan, Y.F. Chen, and Y.S.
Huang, “Photoreflectance study of barrier-width
dependence of above-barrier states in GaAs/AlxGa1-xAs multiple quantum
wells”, Jpn. J. Appl. Phys., 36, 5448, (1997)
|
|
82
|
I.M. Chang and Y.F. Chen, “Light emitting mechanism of porous silicon”, J. Appl. Phys., 82, 3514 (1997)
|
|
83
|
J.C. Fan and Y.F. Chen, “Compositional dependence of the conduction-band effective mass
of InGaAsP lattice matched to InP”, Chinese J.
Phys., 35, 490(1997)
|
|
84
|
J.C. Fan , Y.H. Chang, Y.F.
Chen, J.F. Whang, F.F. Fang, W.J. Tsai, and C.Y. Chang, “Enhancement of Subnikov-de Hass oscillations by microwave
radiation”, Chinese J. Phys., 35, 917 (1997)
(invited paper in memory of Dr. Wu's 90th birthday).
|
|
85
|
C.C. Huang, I.M. Chang, Y.F.
Chen, and P.K. Tseng, “Correlation between
photoluminescence and positron annihilation spectra in porous silicon”, Physica B, 245, 9 (1998)
|
|
86
|
C.C. Huang, I.M. Chang, J.H.
Huang, J.C. Fan, Y.F. Chen, and P.K. Tseng, “A
study of porous silicon prepared under different HF concentrations by
positron annihilation”, Phys. Lett. A, 273, 183
(1998)
|
|
87
|
Y.T. Dai, J.L. Shen, Y.F.
Chen, S.Z. Chang, and S.C. Lee, “Nonparabolicity
and effective mass of conduction electrons in In1-xGaxAs alloys”, Chinese J. Phys., 36, 20 (1998)
|
|
88
|
Y.T. Dai, J.C. Fan, and Y.F.
Chen, “Studies of two-subband occupied electron gas
in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by
far-infrared modulated photoluminescence”, J. Appl.
Phys., 83, 2127 (1998)
|
|
89
|
Y.F. Chen, L.H. Chu, S.C. Pan,
Y.S. Yuang, and I.M. Chang, “Alloy fluctuations in
Si1-xGex/Si quantum wells”, Proc. NSC, R.O.C., Part
A, 22, 439 (1998) ( invited paper)
|
|
90
|
Y.K. Chang, H.H. Hsieh, W.F.
Pong, M.H. Tsai, K.H. Lee, T.E. Dann, F.Z. Chien, P.K. Tseng, K.L. Tsang,
W.K. Su, L.C. Chen, S.L. Wei, K.H. Chen, D.M. Bhusari, and Y.F. Chen, “Electronic and atomic structures of the Si-C-N thin film by
x-ray-absorption spectroscopy and theoretical calculations”, Phys. Rev. B, 58, 9018 (1998)
|
|
91
|
L.C. Chen, C.K. Chen, S.L.
Wei, D.M. Bhusari, K.H. Chen, Y.F. Chen, Y.C. Jong, and Y.S. Huang, “Crystalline silicon carbon nitride: A wide band gap
semiconductor”, Appl. Phys. Lett., 72, 2463 (1998)
|
|
92
|
J.C. Fan, C.H. Chen, and Y.F.
Chen, “Observation of persistent photoluminescence
in porous silicon: Evidence of surface emission”,
Appl. Phys. Lett., 72, 1605 (1998)
|
|
93
|
L.C. Tsai, C.F. Huang, J.C.
Fan, Y.H. Chang, Y.F. Chen, W.C. Tsai, and C.Y. Chang, “Persistent Photoconductivity in SiGe/Si quantum wells”, J. Appl. Phys., 84, 877 (1998)
|
|
94
|
J.C. Wang, and Y.F. Chen, “The Meyer-Nelder rule in fullerences”,
Appl. Phys. Lett., 73, 948 (1998)
|
|
95
|
J.C. Fan, Y.J. Lin, Y.F. Chen,
M.C. Chen, and H.H. Lin, “Photoconductivity in
self-organized InAs quantum dots”, J. Appl. Phys.,
85, 5351 (1998)
|
|
96
|
D.Y. Lin, Y.S. Huang, Y.F.
Chen, and K.K. Tiog, “Contactless
electronreflectance and piezoreflectance of a two-dimensional electron gas
at a GaN/AlGaN heterointerface”, Solid State
Commun., 107, 533 (1998)
|
|
97
|
L.C. Tsai, J.C. Fan, Y.F.
Chen, and I. Lo, “Study of persistent
photoconductivity in semimetallic Al0.2Ga0.8Sb/InAs quantum well”, Solid State Commun., 108, 445 (1998)
|
|
98
|
Y.K. Chang, W.F. Pong, M.H.
Tsai, L.C. Chen, K.H. Chen, and Y.F. Chen, “Electronic
and atomic structure of SiCN thin film by x-ray-absorption spectroscopy and
theoretical calculations”, Phys. Rev. B., 58, 9018
(1998)
|
|
99
|
T.Y. Lin, H.M. Chen, M.S.
Tsai, Y.F. Chen, F.F. Fang, C.F. Lin, and G.C. Chi, “Two-dimentional electron gas and persistent photoconductivity in
AlGaN/GaN heterojunctions”, Phys. Rev. B., 58,
13793 (1998)
|
|
100
|
T.Y. Lin, M.S. Tsai, Y.F.
Chen, and F.F. Fang, “Magnetic-field-induced
anomalous phase transition in p-SiGe/Si heterostructures”, J. Phys-Condens. Mat., 10, 9691 (1998)
|
|
101
|
J.C. Fan, B.L. Yong, Y.C.
Yang, Y.F. Chen, W.C. Lee, and T.M. Hsu, “Observation
of Coulomb staircases in arsenic precipitates in low-temperature grown GaAs”, Phys. Status. Solidi. (a) 169, R7 (1998) (Rapid Research
Notes)
|
|
102
|
L.C. Tsai, J.C. Fan, Y.F.
Chen, and I. Lo, “Persistent photoconductivity in
semimetallic AlGaSb/InAs quantum wells”, Phys. Rev.
B., 59, 2174 (1999)
|
|
103
|
J.S. Su, Y.F. Chen, and K.C.
Chiu, “Dielectric properties of fullerence films”, Appl. Phys. Lett., 74, 439 (1999)
|
|
104
|
W.C. Wang, J.C. Fan, and Y.F.
Chen, “Evidence of Bose-Einstein condensation of
exciton in semimetallic AlxGa1-xSb/InAs quantum wells”, Chinese J. Phys., 37, 233 (1999)
|
|
105
|
H.Y. Wang, S.C. Huang, T.Y.
Yan, J.R. Gong, T.Y. Lin, and Y.F. Chen, “Growth
and characterization of GaN films on (0001) sapphire substrates by
alternate supply of trimethylgallium and NH3”,
Mat. Sci. Eng. B-Solid, 57, 218 (1999)
|
|
106
|
J.C. Fan, J.C. Wang, and Y.F.
Chen, “The optical and electrical studies of
hydrogen passivation in GaInP/GaAs heterostructrues”, Appl. Phys. Lett., 74, 1463 (1999)
|
|
107
|
T.Y. Lin, J.C. Fan, and Y.F.
Chen, “Effects of alloy potential fluctuations in
InGaN epitaxial films”, Semicond. Sci. Tech., 14,
406 (1999)
|
|
108
|
J.C. Fan, and Y.F. Chen, “Above-barrier states in GaAs-AlGaAs superlattices studied by
photoconductivity and photoreflectance”, J. Appl. Phys.,
86, 1460. (1999)
|
|
109
|
J.S. Su, J.C. Wang, Y.F. Chen,
J.L. Shen, and W.C. Chou, “Dielectric studies of
Zn1-xMnxSe epilayers”, J. Appl. Phys., 86, 1630.
(1999)
|
|
110
|
W.K. Hung, M.Y. Chen, J.C.
Fan, T.Y. Lin, and Y.F. Chen, “Pulsed laser deposition
of epitaxial GaNxA1-x on GaAs”, Appl. Phys. Lett.,
74, 3951 (1999)
|
|
111
|
W.C. Wang, and Y.F. Chen, “Positive and negative persistent photoconductivities in
semimetallic AlxGa1-xSb/InAs quantum wells”, J.
Appl. Phys., 86, 3152 (1999)
|
|
112
|
C.H. Chen and Y.F. Chen, “Optical properties of n-type porous silicon obtained by
photo-electrochemical eching”, Solid State Commun.,
111, 681 (1999)
|
|
113
|
J.L. Shen, T.Y. Lin, Y.F.
Chen, and Y.H. Chang, “Studied of far-infrared
magneto-photoconductivity of D- centers in GaAs/AlGaAs multiple quantum
wells”, Solid State Commun., 112, 675 (1999)
|
|
114
|
J.S. Su, Y.F. Chen, and K.C.
Chiu, “Dielectric properties of C60 films at high
temperature region”, Appl. Phys. Lett., 75, 1607
(1999)
|
|
115
|
D.R. Hang, Y.F. Chen, F.F.
Fang, and W.I. Wang, “Observation of positive and
negative persistent photoconductivities in two-side doped
In0.53Ga0.47As/In0.52Al0.48As quantum well”, Phys.
Rev. B, 60, 13318 (1999)
|
|
116
|
C.H. Chen and Y.F. Chen, “Strong and stable visible luminescence from Au-passivated porous
silicon”, Appl. Phys. Lett., 75, 2560 (1999)
|
|
117
|
J.C. Fan, J.C. Wang, and Y.F.
Chen, “Persistent photoconductivity in GaInP/GaAs
heterostructures”, Appl. Phys. Lett., 75, 2978
(1999)
|
|
118
|
M.C. H. Liao, Y.H. Chang, C.C.
Tsai, M.H. Chien, and Y.F. Chen, “Growth and
photoluminescence study of ZnTe quantum dots”, J.
Appl. Phys., 86, 4694 (1999)
|
|
119
|
Y.F. Chang, H.H. Hsieh, W.F.
Pong, M.H. Tsai, T.E. Dann, F.Z. Chien, P.K. Tseng, L.C. Chen, J.J. Wu,
Y.F. Chen, “X-ray absorption of Si-C-N thin films:
A comparison between crystalline and amorphous phases”, J. Appl. Phys., 86, 5609(1999)
|
|
120
|
K.H. Chen, J.J. Wu, C.Y. Wen,
L.C. Chen, C.W. Fan, P.F. Kuo, Y.F. Chen, and Y.S. Huang, “ Wide band gap silicon carbon nitride films deposited by
electron cyclotron resonance plasma chemical vapor deposition”, Thin Solid Films,
355, 205 (1999)
|
|
121
|
H.C. Yang, T.Y. Lin, M.Y.
Huang, and Y.F. Chen, “Optical properties of
Si-doped GaN films”, J. Appl. Phys., 86, 6124
(1999)
|
|
122
|
C.H. Hsieh, Y.S. Huang, K.K.
Tiong, C.W. Fan, Y.F. Chen, L.C. Chen, J.J. Wu, and K.H. Chen, “Piezoreflectance study of a Fe-containing silicon carbon nitride
crystalline film”, J. Appl. Phys., 87, 280 (2000)
|
|
123
|
C.H. Chen and Y.F. Chen, “Transport mechanisms in n-type porous silicon obtained by
photoelectrochemical etching”, Chinese J. Phys.,
38, 150 (2000)
|
|
124
|
T.Y. Lin, H.C. Yang, and Y.F.
Chen, “Optical quenching of the photoconductivity
in n-type GaN”, J. Appl. Phys., 87, 3404 (2000)
|
|
125
|
C.H. Hsieh, Y.S. Huang, P.F.
Kuo, Y.F. Chen, L.C. Chen, J.J. Wu, K.H. Chen, K.K. Tiong, “Piezoreflectance study of silicon carbon nitride nanorods”, Appl. Phys. Lett., 76, 2044 (2000)
|
|
126
|
J.F. Chen, P.Y. Wang, J.S.
Wang, N.C. Chen, X.J. Guo, and Y.F. Chen, “Strain
relaxation in InGaAs/GaAs quantum well structure”,
J. Appl. Phys., 87, 1251 (2000)
|
|
127
|
F.G. Tarntair, C.Y. Wen, L.C. Chen,
J.J. Wu, K.H. Chen, P.F. Kuo, S.W. Chang, Y.F. Chen, W.K. Hong, and H.C.
Cheng, “Field emission from quasi-aligned SiCN
nanorods”, Appl. Phys. Lett., 76, 2630 (2000)
|
|
128
|
J.L. Shen, J.Y. Chang, H.C.
Lin, W.C. Chou, Y.F. Chen, T. Jung, M.C. Wu, “Nearly
in-plane photoluminescence studies in asymmetric semiconductor
microcavities”, Solid State Commun., 116, 431
(2000)
|
|
129
|
K.H. Chen, J.J. Wu, L.C. Chen,
C.Y. Wen, P.F. Kuo, S.W. Cheng, and Y.F. Chen, ”Comparative
studies on field emission properties of carbon–based
materials”, Diam. Relat. Mater., 9, 1249 (2000)
|
|
130
|
H.C. Yang, P.F. Kuo, T.Y. Lin,
Y.F. Chen, K.H. Chen, L.C. Chen, and J.I. Chyi, “Mechanism
of luminescence in InGaN/GaN mutiple quantum wells”,
Appl. Phys. Lett., 76, 3712 (2000)
|
|
131
|
W.K. Hung, M.Y. Chern, and
Y.F. Chen, “Epitaxial GaNxAs1-x layer formed by
Pulsed-laser airradiation of GaAs in an ambient nitrogen gas”, Semicond. Sci. Tech., 15, 892 (2000)
|
|
132
|
J.C. Fan, W.K. Hung, Y.F.
Chen, J.S. Wang, and H.H. Lin, “Mechanism for
photoluminescence in an InyAs1-yN/In1-xGa1-xAs single quantum well”, Phys. Rev. B, 62, 10990 (2000)
|
|
133
|
W.K. Hung, M.Y. Chern, Y.F.
Chen, Z.L. Yang, and Y.S. Huang, “Optical
properties of GaAs1-xNx on GaAs”, Phys. Rev. B, 62,
13028 (2000)
|
|
134
|
H.C. Yang, T.Y. Lin and Y.F.
Chen, “Nature of the 2.8 eV photoluminescence band
in Si-doped GaN”, Phys. Rev. B, 62, 12593 (2000)
|
|
135
|
Y.F. Chen, T.Y. Lin, and H.C.
Yang, “Exciton localization and the stokes’ shift in undoped InGaN/GaN mutiquantum wells”, Proc. SPIE, 3938, 137 (2000) (invited paper).
|
|
136
|
Y.H. Chang, M.H. Chieng, C.C.
Tsai, M.C.H. Liao, Y.F. Chen, “Growth and
photoluminescence study of ZnSe quantum dots”, J.
Electron. Mater., 29, 173 (2000)
|
|
137
|
H.C. Yang, T.Y. Lin, Y.F. Chen,
“Persistent photoconductivity in InGaN/GaN mutiple
quantum wells”, Appl. Phys. Lett., 78, 338 (2001)
|
|
138
|
C.W. Chang, H.C. Yang, C.H.
Chen , H.J. Chang, and Y.F. Chen, “Optoelectronic
properties of ZnSe/ZnMgSSe mutiple quantum wells”,
J. Appl. Phys., 89, 3725 (2001)
|
|
139
|
H.M. Lin, Y.F. Chen, J.L.
Shen, and W.C. Chou, “Dielectric studies of
Cd1-x-yZnxMnyTe crystals”, J. Appl. Phys., 89, 4476
(2001)
|
|
140
|
H.M. Lin, Y.F. Chen, J.L.
Shen, and W.C. Chou, “Dielectric studies of ZnSe1-xTex
epilayers”, Appl. Phys. Lett., 78, 1909 (2001)
|
|
141
|
C.H. Chen, Y.F. Chen, and H.X.
Jiang, “Zone folding of optical phonon in AlGaN/GaN
superlattices”, Appl. Phys. Lett., 78, 3035 (2001)
|
|
142
|
H.J. Chang, Y.F. Chen, H.P.
Lin, C.Y. Mou, “Strong visible photoluminescence
from SiO2 nanotubes at room temperature”, Appl.
Phys. Lett. Vol. 78, 3791 (2001)
|
|
143
|
D.R. Hang, C.T. Liang, C.F.
Huang, Y.H. Chang, Y.F. Chen, H.X. Jiang and J.Y. Lin, “Effective mass of two-dimensional electron gas in an
Ala2Ga0.8N/GaN heterojunction”, Appl. Phys. Lett.,
79, 66 (2001)
|
|
144
|
D.R. Hang, C.H. Chen, Y.F.
Chen, H.X. Jiang, “AlxGaxN/GaN band offsets
determined by deep-level emission”, J. Appl. Phys.
Lett., 90, 1887 (2001)
|
|
145
|
C.C. Chen, K.H. Chen, L.C.
Chen and Y.F. Chen, “Catalytic growth and
characterization of gallium nitride nanowires”, J.
Am. Chem. Soc., 123, 2791 (2001)
|
|
146
|
S.M. Tseng, Y.F. Chen, Y.T. Cheng,
C.H. Hsu, Y.S. Huang, and D.Y. Lin, “Observation of
quasibound states in type-II ZnTe/CdSe superlattices studied by modulation
spectroscopies and photoconductivity at room temperature”, Phys. Rev. B, 64 195311 (2001)
|
|
147
|
S. Chattopadhyay, L.C. Chen,
C.T. Wu, K.H. Chen, J.S. Wu, Y.F. Chen, G. Lehmann, and P. Hess, “Thermal diffusivity in amorphous silicon carbon nitride films by
the traveling wave technique”, Appl. Phys. Lett.,
79, 332 (2001)
|
|
148
|
C.T. Liang, C.F. Huang, Y.M.
Cheng, T.Y. Huang, Y.H. Chang and Y.F. Chen, “Studies
of the temperature-driver flow lines and phase transitions in a
two-dimensional Si/SiGe hole system”, Chinese J.
Phys., 39, L305 (2001)
|
|
149
|
K.S. Cho, Y.F. Chen, J.L.
Shen, W.C. Chou, “Dielectric studies of ZnMnSeTe
epilayers”, Solid State Commun., 118, 629 (2001)
|
|
150
|
L.C. Chen, S.W. Chang, C.S.
Chang, C.Y. Wen, J.J. Wu, Y.F. Chen, Y.S. Huang, and K.H. Chen, “Catalyst-free and controllable growth of SiCN ranorods”, J. Phys. Chem. Solids, 62, 1567, (2001)
|
|
151
|
C.T. Liang, M.Y. Simmons, D.A.
Ritchie, G.H. Kim, Y.H. Chang, and Y.F. Chen, “Quantum
magneto-transport in two-dimensional GaAs electron gases and SiGe hole
gases”, J. Phys. Chem. Solids, 62, 1789 (2001)
|
|
152
|
R.M. Lin, S. C. Lee, H.H. Lin
and Y.F. Chen, “Blueshift of photoluminescence peak
in ten periods In As qaumtum dots superlattice”, J.
Cryst. Growth, 227,1034 (2001)
|
|
153
|
J.L. Shen, C.Y. Chang, H.C.
Liu, and Y.F. Chen, “Reflectivity and
photoluminescence studies in reflectivity in absorbing Bragg reflectors”, Semicond. Sci. Tech., 16, 548 (2001)
|
|
154
|
J.L. Shen, C.Y. Chang, W.C.
Chou, and Y.F. Chen, “Temperature dependence of the
reflectivity in absorbing Bragg reflectors”, Opt.
Express, 9, 287 (2001)
|
|
155
|
C.H. Chen, H.J. Chang, Y.F.
Chen, H.X. Jiang, and J.Y. Lin, “Mechanism of
photoluminescence in GaN/Alo.2Gao.8N superlattices”,
Appl. Phys. Lett., 79, 3806 (2001)
|
|
156
|
J.L. Shen, C.Y. Chang, P.N.
Chen, W.C. Chou, Y.F. Chen, M.C. Wu, “Optical absorption
studies in absorbing Bragg reflectors”, Opt.
Commun., 199, 155 (2001)
|
|
157
|
J.F. Chen, N.C. Chen, J.S.
Wang, Y.F. Chen, “Differential capacitance
measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes”, IEEE T. Electron. Dev., 48, 204 (2001)
|
|
158
|
W.K. Hung, M.Y. Chern, Y.F.
Chen, W.C. Chou, C.S. Yang, C.C. Cheng, and J.L. Shen, “Optical properties of Zn1−xMnxSe (x≤0.78) epilayers”,
Solid State Commun, 120, 311 (2001)
|
|
159
|
W.K. Hung, K.S. Cho, M.Y. Chern,
Y.F. Chen, and H.H. Lin, “Nitrogen-induced
enhancement of the electron effective mass in InNxAsi-x”, Appl. Phys. Lett., 80, 796 (2002)
|
|
160
|
C.H. Chen, L.Y. Huang, Y.F.
Chen, H.X. Jiang, and J.Y.Lin. “Mechanism of
enhanced Luminescence in InxAlyGa 1-x-yN quaternary alloys”, Appl. Phys. Lett., 80, 1397 (2002)
|
|
161
|
Y.Y. Ke, M.H. Ya, Y.F. Chen,
and H.H. Lin, “Photoluminescence study of hydrogen
passivation in InAs1-xNx/InGaAs single quantum well on InP”, Appl. Phys. Lett., 80, 3539 (2002)
|
|
162
|
C.H. Chen, Y.F. Chen, An Shih,
and S.C. Lee, “Nondegrading Photoluminescence in
porous silicon by deuterium plasma treatment”,
Phys. Rev. B, 65, 195307 (2002)
|
|
163
|
C.H. Liang, C.L. Chen, J.S.
Hwang, K.H. Chen, Y.T. Hung, and Y.F. Chen, “Selective
area growth of InN nanowires on gold-patterned Si (100)substrates”, Appl. Phys. Lett., 81, 22 (2002)
|
|
164
|
M.H. Ya, Y.F. Chen, and Y.S.
Huang, “Nonlinear behaviors of valence-band
splitting and deformation potential in dilute GaNxAs1-x alloys”, J. Appl. Phys., 92, 1446 (2002)
|
|
165
|
D.R. Hang, C.F. Huang, W.K.
Hung, Y.H. Chang, J.C. Chen, H.C. Yang, Y.F. Chen, D.K. Shih, T.Y. Chu, and
H.H. Lin, “Shubnikov-de Haas oscillations of
two-dimensional electron gas in a InAsN/InGaAs single quantum well”, Semicond. Sci. Tech., 17, 999 (2002)
|
|
166
|
Y.S. Chiu, W.S. Su, M.H. Ya,
and Y.F. Chen, “Properties of photoluminescence in
type-II GaAsSb/GaAs multiple quantum wells”, J.
Appl. Phys., 92, 5810 (2002)
|
|
167
|
L.Y. Huang, C.H. Chen, Y.F.
Chen, W.C. Yeh, and Y.S. Huang, “Degree of ordering
in Al0.5In0.5 P by
Raman scattering”, Phys. Rev. B, 66, 073203 (2002)
|
|
168
|
W.S. Su, M.H. Ya, Y.S. Chiu,
and Y.F. Chen, “Polarized optical properties in type-II
ZnTe/CdSe multiple quantum wells induced by interface chemical bonds”, Phys. Rev. B, 66, 113305 (2002)
|
|
169
|
C.F. Huang, Y.H. Chang, C.M.
Lee, H.T. Chou, H.D. Yeh, C.T. Liang, Y.F. Chen, H.H. Cheng, H.H. Lin, and
G.J. Huang, “Insulator-Quantum Hall Conductor
transitions at low magnetic field”, Phys. Rev. B,
65, 045303 (2002)
|
|
170
|
Y.S. Chiu, M.H. Ya, W.S. Su,
T.T. Chen, Y.F. Chen, and H.H. Lin, “Giant
polarized photoluminescence and photoconductivity in type-II GaAs/GaAs Sb
multiple quantum wells induced by interface chemical bonds”, Appl. Phys. Lett., 81, 4943 (2002)
|
|
171
|
M.M. Ya, W.Z. Cheng, Y.F.
Chen, and T.Y. Lin, “Upside-down tuning of light
and heavy-hole states in GaNAs/GaAs single quantum wells by thermal expansion
and quantum confinement”, Appl. Phys. Lett., 81, 3386 (2002)
|
|
172
|
J. S. Wu, S. Dhara, C.T. Wu,
K.H. Chen, Y.F. Chen, and L.C. Chen, “Growth and
optical properties of self-organized Au2Si nanopheres pea-podded in a
silicon oxide nanowires”, Adv. Mater., 14, 1847
(2002)
|
|
173
|
C.H. Chen, T.Y. Lin, and Y.F.
Chen, “In-plane optical anisotropy in InGaN/GaN
quantum wells”, Physica. Status Solidi (c), 0, 284
(2003)
|
|
174
|
D.R. Hang, C.T. Liang, J.R. Juang,
T.Y. Huang, W.K. Huang, Y.F. Chen, G.H. Kim, J.H. Lee, and J.H. Lee, “Electrically detected and microwave-modulate Shubnikov-de Haas
oscillations in an Al0.4 Ga0.6 N/GaN heterostructure”, J. Appl. Phys., 93, 2055 (2003)
|
|
175
|
S.P. Fu, Y.F. Chen, J.C. Wang,
J.L. Shen, and W.C. Chou, “Dielectric properties of
ZnMnTe epilayers”, J. Appl. Phys., 93, 2140 (2003)
|
|
176
|
C.H. Chen, T.Y. Lin, Y.F.
Chen, H.X. Jiang, and J.Y. Lin, “Persistent
photoconductivity in InAlGaN epilayer”, Appl. Phys.
Lett., 82, 1884 (2003)
|
|
177
|
H.M. Lin, Y.L. Che, J. Yang,
Y.C. Liu, K.M. Yin, J.J. Kai, F.R. Chen, L.C. Chen, Y.F. Chen and C.C.
Chen, “Synthesis and characterization of core-shell
GaN and GaP nanowires”, Nano Lett., 3, 537 (2003)
|
|
178
|
J.S. Wu, Y.F. Chen, S. Dhara,
C.T. Wu, K.H. Chen, L.C. Chen, “Interface energy of
Au7Si grown in the interfacial layer of truncated hexagonal dipyramidal Au
nanoislands on polycrystalline-silicon”, Appl.
Phys. Lett., 82, 4468 (2003)
|
|
179
|
K.F. Wang, S.P. Fu, Y.F. Chen,
J.L. Shen, and W.C. Chou, “Dielectric properties of
Cd Zn Te epilayers”, J. Appl. Phys., 94, 3371
(2003)
|
|
180
|
T.T. Chen, C.H.Chen, W.Z.
Cheng, W.S. Su, M.H. Ya, Y.F. Chen, P.W. Liu, and H.H. Lin, “Optical studies of strained type-II GaAs Sb/GaAs multiple
quantum wells”, J. Appl. Phys., 93, 9655 (2003)
|
|
181
|
C.H. Chen, W.H. Chen, Y.F.
Chen, and T.Y. Lin, “Piezoelectric,
electro-optical, and photoelastic effects in InGaN/GaN multiple quantum
wells”, Appl, Phys. Lett., 83, 1770 (2003)
|
|
182
|
D.R. Hang, Y.F. Chen, and C.F.
Huang, “Microwave-aided transport measurements on
high-density two-dimensional electron systems confined at AlGaN/GaN
heterointerfaces”, Physica. Status Solidi. (c), 0,
2323 (2003)
|
|
183
|
J.R. Juang, T.Y. Huang, T.M.
Chen, M.G. Lin, G.H. Kim, C.T. Liang, D.R. Hang, Y.F. Chen, and J.I. Chyi, “Transport in a gated AlGaN/GaN electron system”, J. Appl. Phys., 94, 3181 (2003)
|
|
184
|
H.M. Lin, J. Yang, Y.L. Chen, Y.C.
Liu, K.M. Yin, J.J. Kai, F.R. Chen, L.C. Chen, Y.F. Chen, and C.C. Chen, “Synthesis and Characterization of core-shell GaP and GaN
nanowires”, Mat. Res. Soc. Sympl. Proc., 776, Q2.6.1 (2003).
|
|
185
|
Y.C. Lee, G.W. Shu, I.M. Chen,
C.P. Chen, J.L. Shen, W.Y. Uen, C.W. Chang, Y.F. Chen, and W.C. Chow, “Optical studies of the Holmium-doped InGaAs P epilayers”, Phys. Status. Solidi. (a)., 200, 439 (2003)
|
|
186
|
C.S. Chang, S. Chattopadhyay,
L.C. Chen, K.H. Chen, C.W. Chen, Y.F. Chen, R. Collazo, and Z. Sitar, “Band-gap dependence of field emission from one-dimensional
nanostructures grown on p-type and n-type silicon substrates”, Phys. Rev. B, 68, 125322
(2003)
|
|
187
|
Y.C. Chou, S. Chattopadhyaya,
L.C. Chen, Y.F. Chen, K.H. Chen, “Doping and electrical
properties of amorphous silicon carbon nitride films”, Diam. Relat. Mater., 12, 1213 (2003)
|
|
188
|
Y.F. Chen, Y.S. Chiu, M.H. Ya,
T.T. Chen, “Giant polarized photoluminescence and
photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by
interface chemical bonds”, Inst. Phys. Conf. Ser.,
174, 397 (2003)
|
|
189
|
C.F. Tsai, Y.H. Chang, J.H.
Cheng, S.C. Yang, C.C. Hsu, and Y.F. Chen, “Successful
growth of two different quantum dots on one substrate”, Physica E, 21, 372 (2004)
|
|
190
|
T.Y. Huang, Y.M. Cheng, C.T.
Liang, C.F. Huang, Y.H. Chang, and Y.F. Chen, “Magnetic-field-induced
phase transition in Si/Si Ge hole system”, Physica
E, 22, 244 (2004)
|
|
191
|
D.R. Huang, D.K. Shih, C.F. Huang,
W.K. Hung, Y.H. Chang, Y.F. Chen, and H.H. Lin, “Large
effective mass enhancement of the InAsN alloys in the dilute limit probed
by Shubnikov-Hass oscillations”, Physica E, 22, 308
(2004)
|
|
192
|
J.R. Juang, D.R. Hang, T.Y.
Huang, W.K. Hung, Y.F. Chen, G.H. Kim, M.G. Lin, T.M. Chen, C.T. Liang, Y.
Lee, and J.H. Lee, “Conventional and
microwave-modulated Shubniko-de Hass oscillations in GaN electron systems”, Physica E, 21, 631 (2004)
|
|
193
|
T.Y. Huang, J.R. Juang, C.F. Huang,
G.H. Kim, C.P. Huang, C.T. Liang, Y.H. Chang, Y.F. Chen, Y. Lee, D.A.
Ritchie, “On the low-field insulator-quantum Hall
conductor transitions”, Physica E, 22, 240 (2004)
|
|
194
|
D.R. Hang, J.R. Juang, T.Y.
Huang, C.T. Liang, W.K. Hung, Y.F. Chen, G.H. Kim, Y. Lee, J.H. Lee, and
C.F. Huang, “Microwave-modulated Shubnikov-de Haas
oscillations in a two-dimensional GaN electron gas”,
Physica E, 22, 578 (2004)
|
|
195
|
Y.F. Chen, W.S. Su, M.H. Ya,
and Y.S. Chiu, “Giant polarized optical properties in
type II ZnTe/CdSe multiple quantum wells induced by interface chemical
bonds”, Phys. Status. Solidi. (b), 241, 538 (2004)
|
|
196
|
Y.C. Lee, G.W. Shu, J.L. Shen,
W.Y. Uen, and Y.F. Chen, “Optical studies of
Nd-doped InGaAs P epilayers”, Solid State Commun.,
129, 47 (2004)
|
|
197
|
L.Y. Lin, C.W. Chang, W.H.
Chen, Y.F. Chen, S.P. Guo, and M.C. Tamargo, “Raman
investigation of anharmonicity and disorder-induces effects in ZnBeSe
epifilms”, Phys. Rev. B, 69, 075204 (2004)
|
|
198
|
C.H. Chen, Y.F. Chen, Z.H.
Lan, L.C. Chen, K.H. Chen, H.X. Jiang, and J.Y. Lin, “Mechanism of enhanced luminescence in InxAlyGa1–x–yN quaternary epilayers”, Appl, Phys. Lett., 84, 1480 (2004)
|
|
199
|
Y.M. Chang, H.H. Lin, C.T.
Chia, and Y.F. Chen, “Observation of coherent
interfacial optical phonons is GaInP/GaAs/GaInP single quantum wells”, Appl. Phys. Lett., 84, 2548 (2004)
|
|
200
|
S. Dhara, A. Datta, C.T. Wu,
Z.H. Lan, K.H. Chen, Y.L. Wang, Y.F. Chen, C.W. Hsu, L.C. Chen, H.M. Lin,
and C.C. Chen, “Blue shift of yellow luminescence
band in self-ion-implanted n-GaN nanowire”, Appl.
Phys. Lett., 84, 3486 (2004)
|
|
201
|
T.Y. Lin, W.S. Su, and Y.F.
Chen, “Investigation of surface properties of
Si-doped GaN films by electric force microscopy and photoluminescence”, Solid State Commun., 130, 49 (2004)
|
|
202
|
T.Y. Lin, Y.M. Chang, Y.F.
Chen, H.X. Jiang, and J.Y. Lin, “Optical properties
of GaN/AlN multiple quantum wells”, Solid State
Commun., 131, 389 (2004)
|
|
203
|
S.P. Fu, and Y.F. Chen, “Effective mass of InN epifilms”, Appl.
Phys. Lett., 85, 1523 (2004)
|
|
204
|
T.T. Chen, W.S. Su, Y.F. Chen,
P.W. Liu, and H.H. Lin, “Nature of persistent
photoconductivity in GaAsSb/GaAs multiple quantum well”, Appl. Phys. Lett., 85, 1526 (2004)
|
|
205
|
N.E. Hsu, W.K. Hung, and Y.F.
Chen, “Origin of defect emission identified by
polarized luminescence from aligned ZnO nanorods”,
J. Appl. Phys., 96, 4671 (2004)
|
|
206
|
C.M. Lin, and Y.F. Chen, “Properties of photoluminescence in type-II ZnMnSe/ZnSeTe multiple
quantum wells”, Appl. Phys. Lett., 85, 2544 (2004)
|
|
207
|
Y.L. Chen, C.C. Chen, J.C.
Jeng, and Y.F. Chen, “Enhancement of optical
properties of CdSe pillars fabricated by the combination of electron-beam
lithography and electrochemical deposition”, Appl.
Phys. Lett., 85, 1259 (2004)
|
|
208
|
J.C. Fan, Y.C. Wang, I.S.
Chen, K.J. Shiao, and Y.F. Chen, “Thermally-stimulated
current in self-organized InAs quantum dots”, Appl.
Phys. Lett., 85, 5604 (2004)
|
|
209
|
Z.H. Lan, W.M. Wang, C. L. Sun,
S.C. Shi, C.W. Hsu, T.T. Chen, K.H. Chen, C.C. Chen, Y.F. Chen, and L.C.
Chen, “Growth mechanism, structure, and IR
Photoluminescence studies of InN nanorods”, J.
Cryst. Growth, 269, 87 (2004)
|
|
210
|
J.P. Chang, T.Y. Lin, H.F.
Hong, T.C. Gung, J.L. Shen, and Y.F. Chen, “Effects
of proton irradiations on GaN-based materials”,
Physica Status Solidi (c), 1, 2466 (2004)
|
|
211
|
K.S. Cho, T.Y. Huang, C.P.
Huang, Y.H. Chiu, C.T. Liang, Y.F. Chen and I. Lo, “Exchange-enhanced g-factors in an Al0.25Ga0.75N/GaN
two-dimensional electron system”, J. Appl.
Phys., 96, 7370 (2004)
|
|
212
|
J.R. Juang, D.R. Hang, M.G.
Lin, T.Y. Huang, G.H. Kim, C.T. Liang, Y.F. Chen, W.K. Hung, W.H. Seo, Y.
Lee, and J.H. Lee, “Microwave-modulated shubnikov-de
Haas-like oscillations in an Al0.4Ga0.6N/GaN electron system”, Chinese J. Phys., 42, 629, (2004)
|
|
213
|
H.J. Chang, C.H. Chen, L.Y.
Huang, Y.F. Chen, and T.Y. Lin, “In-plane optical anisotropy
in InGaN/GaN multiple quantum wells induced by Pockels effect”, Appl. Phys. Lett., 86, 011924 (2005)
|
|
214
|
H.J. Chang, C.H. Chen, Y.F.
Chen, T.Y. Lin, L.C. Chen, K.H. Chen, and Z.H. Lan, “Direct evidence of nanocluster-induced luminescence in In GaN
epifilms”, Appl. Phys. Lett., 86, 021911 (2005)
|
|
215
|
L.M. Chuang, H.K. Fu, and Y.F.
Chen, “Fabrication and optical properties of
two-dimensional photonic crystals of CdSe pillars”,
Appl. Phys. Lett., 86, 061902 (2005)
|
|
216
|
S.K. Lin, K.T. Wu, C.P. Huang,
C.T. Liang, Y.H. Chang, Y.F. Chen, and T.Y. Lin, “Electron
transport in In-rich InGaN films”, J. Appl. Phys.,
97, 046101 (2005)
|
|
217
|
C.L. Cheng, Y.F. Chen, R.S.
Chen, and Y.S. Huang, “Raman scattering and
field-emission properties of RuO2 nanorods”, Appl.
Phys. Lett., 86, 103104 (2005)
|
|
218
|
C. M. Chuang, W.B. Lu, W.F.
Su, C.M. Lin, and Y.F. Chen, “Manipulation of
luminescence from CdSe nanoparticles by three-dimensional photonic crystal”, J. Appl. Phys., 97, 096104 (2005)
|
|
219
|
K.S. Cho, T.Y. Huang, H.S.
Wang, M.G. Lin, T.M. Chen, C.T. Liang, and Y.F. Chen, “Zero-field spin splitting in modulation-doped AlxGa1–xN/GaN two-dimensional electron systems”,
Appl. Phys. Lett., 86, 222102 (2005)
|
|
220
|
J.W. Chen, Y.F. Chen, H. Lu,
and W.J. Schaff, “Cross-sectional Raman spectra of
InN epifilms”, Appl. Phys. Lett., 87, 041907 (2005)
|
|
221
|
H.J. Chang, C.H. Chen, Y.F.
Chen, T.Y. Lin, L.C. Chen, K.H. Chen, and Z.H. Lan, “Response to "Comment on `Direct evidence of
nanocluster-induced luminescence in InGaN epifilms”,
Appl. Phys. Lett., 87, 136102 (2005)
|
|
222
|
H. K. FU, Y.F. Chen, R.L.
Chern, and C.C. Chang, “Connected hexagonal
photonic crystals with largest full band gap”, Opt.
Express, 13, 7854 (2005)
|
|
223
|
S.C. Chen, S.K. Lin, K.T. Wu,
C.P. Huang, P.H. Chang, N.C. Chen, C.A. Chang, H.C. Peng, C.F. Shih, K.S.
Liu, H.S. Wang, P.T. Yang, C.-T. Liang, Y.H. Chang and Y.F. Chen, “Transport measurements on MOVPE-grown InN film”, Microelectron. J., 36, 428 (2005)
|
|
224
|
Wang JS, Lin G, Hsiao RS, et
al., Continuous-wave high-power (320 mW) single mode operation of
electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide
lasers, Appl. Phys. B-Lasers O., 81 1097 (2005)
|
|
225
|
A. Wang, C.Y. Mou, Y.P. Shih,
and Y.F. Chen, “Au-Ag alloy nanoparticles as
catalyst for CO oxidation: Effect of Si/Al ratios of mesoporous support”, J. Catal., 237, 197 (2006)
|
|
226
|
S.P. Fu, and Y.F. Chen, “Recombination mechanism in InN epifilms”,
Solid State Commun., 137, 203 (2006)
|
|
227
|
M.S. Hu, W.M. Wang, T.T. Chen,
L.S. Hong, C.W. Chen, C.C. Chen, Y.F. Chen, K.H. Chen, L.C. Chen, “Sharp infared emission from Single-crystalline InN nanobelts
derived by guided-stream thermal chemical vapor deposition”, Adv. Funct. Mater., 16, 537 (2006)
|
|
228
|
T.Y. Lin, Y.M. Hsu, and Y.F.
Chen, “Origin of blue-band emission from Mg-doped
Al0.15Ga0.85N/GaN superlattices”, Appl. Phys.
Lett., 88, 081912 (2006)
|
|
229
|
H.Y. Lin, Y.F. Chen, “Direct evidence of pulling effect in AlGaN epifilms”, J. Cryst. Growth, 290, 225 (2006)
|
|
230
|
S.P. Fu, and Y.F. Chen, “Photoluminescent
properties of InN epifilms”, Semicond. Sci. Tech.,
21, 244 (2006)
|
|
231
|
P.H. Chang, N.C. Chen, C.T.
Liang, and Y.F. Chen, “Superconductivity and
mixed-state characteristic of InN films grown by metal-organic vapor phage
epitaxy”, Diam. Relat. Mater., 15, 1179 (2006)
|
|
232
|
W.S. Su, C.W. Lu, and Y.F.
Chen, “Light induced electrostatic force microscopy
in InN films”, J. Appl. Phys., 99, 053518 (2006)
|
|
233
|
J.H Chen., J.Y. Lin, J.K.
Tsai, H. Park, G.H. Kim, D.H. Youn, H.I. Cho, E.J. Lee, J.H. Lee, C.T.
Liang and Y.F. Chen, “Experimental evidence for
Drude-Boltzmann-like transport in a two-dimensional electron gas in an
AlGaN/GaN heterostructure”, J. Korean Phys. Soc.,
48, 1539 (2006)
|
|
234
|
Y.L. Tsai, J.R. Gong, T.Y.
Lin, H.Y. Lin, Y.F. Chen, and K.M. Lin, “Morphological
and luminescent characteristics of GaN dots deposited on AlN by alternate
supply of TMG and NH3”, Appl. Surf. Sci., 252, 3454
(2006)
|
|
235
|
C.H. Wang, T.T. Chen, K.W.
Tan, and Y.F. Chen, “Photoluminescence properties
of CdTe/CdSe core-shell type-II quantum dots”, J.
Appl. Phys., 99, 123521 (2006)
|
|
236
|
S.P. Fu, T.J. Lin, W.S. Su,
C.Y. Shieh, and Y.F. Chen, “Influence of
hydrogenation on surface morphologies, transport, and optical properties of
InN epifilms”, J. Appl. Phys., 99, 126102 (2006)
|
|
237
|
H.Y. Lin and Y.F. Chen, “Carrier transfer induced photoluminescence change in
metal-semiconductor core-shell nanostructures”,
Appl. Phys. Lett., 88, 161911 (2006)
|
|
238
|
H.Y. Lin and Y.F. Chen, “Giant enhancement of luminescence induced by second-harmonic
surface Plasmon resonance”, Appl. Phys. Lett., 88,
101914 (2006)
|
|
239
|
F.I. Lai, S.Y. Kuo, J.S. Wang,
R.S. Hsiao, H.C. Kuo a, J. Chi, S.C. Wang, H.S. Wang, C.T. Liang, Y.F.
Chen, “Temperature-dependent optical properties of
In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for
1.55μm application grown by molecular beam epitaxy”, J. Cryst. Growth, 291, 27 (2006)
|
|
240
|
F.I. Lai, S.Y. Kuo, J.S. Wang,
H.C. Kuo, S.C. Wang, H.S. Wang, C.T. Liang, and Y.F. Chen, “Effect of nitrogen contents on the temperature dependence of
photoluminescence in InGaAsN/GaAs single quantum wells”, J. Vac. Sci. Technol. A, 24, 1223 (2006)
|
|
241
|
C.A. Chang, S.T. Lien, C.H.
Liu, C.F. Shih, N.C. Chen, P.H. Chang, H.C. Peng, T.Y. Tang, W.C. Lien,
Y.H. Wu, K.T. Wu, J.W. Chen, C.T. Liang, Y.F. Chen, T.U. Lu and T.Y. Lin, “Effect of Buffer Layers on Electrical, Optical and Structural
Properties of AlGaN/GaN Heterostructures Grown on Si”, Jap. J. Appl. Phys., 45, 2516 (2006)
|
|
242
|
H.Y. Lin, C.L. Cheng, Y.Y.
Chou, L.L. Huang, and Y.F. Chen, “Enhancement of
band gap emission stimulated by defect loss”, Opt.
Express, 14, 2372 (2006)
|
|
243
|
C.H. Chuang, M. C. Wu, W.F.
Su, K.C. Cheng and Y.F. Chen, “High Intensity
fluorescence of photoactivated silver oxide from composite thin film with
periodic array structure”, Appl. Phys. Lett., 89,
061912 (2006)
|
|
244
|
M.C. Wu, C.H..Chuang, K.C.
Cjemg. W.F. Su, and Y.F. Chen, “Nanolithography
made from water based spin-coatable LSMO resist”, Nanotechnology,
17, 4399(2006)
|
|
245
|
K.C. Chu and Y.F. Chen, “Liquid crystal driven by CdSe semiconductor”, J. Appl. Phys., 100, 024516 (2006)
|
|
246
|
J.M. Lin, H.Y. Lin, C.L. Cheng
, and Y.F. Chen, “Giant enhancement of band gap
emission of ZnO nanorods by platinum nanoparticles”,
Nanotechnology, 17, 4391 (2006)
|
|
247
|
K.C. Chu, Z.Y. Chao, Y.F. Chen
,Y.C. Wu, and C.C. Chen, “Electrically controlled
surface Plasmon resonance frequency of gold nanorods”, Appl. Phys. Lett., 89, 103107 (2006)
|
|
248
|
D.R. Hang, C.F. Huang, and
Y.F. Chen, “Two-subband-populated AlGaN/GaN
heterostructures probed by electrically detected and microwave-modulated”magnetotransport measurements”, Appl.
Phys. Lett., 89, 092116 (2006)
|
|
249
|
S.J. Lin, S.H. Jee, C.J. Kuo, R.J.
Wu, W.C. Lin, J.S. Chen, Y.H. Liao, C.J. Hsu, T.F. Tsai, Y.F. Chen, and
C.Y. Dong, “Discrimination of basal cell carcinoma
from normal dermal stroma by quantitative multiphoton imaging”, Opt. Lett., 31, 2756 (2006)
|
|
250
|
H.J. Chang, T.Y. Lin, and Y.F.
Chen, “Optical anisotropy induced by pyramidal
defects in Mg-doped AlGaN/GaN superlattices”, J.
Appl. Phys., 100, 066107 (2006)
|
|
251
|
J.M. Lin, H.Y. Lin, C.L.
Cheng, and Y.F. Chen, “Giant enhancement of band
edge emission in ZnO and SnO nanocomposites”, Opt.
Lett., 31, 3173 (2006)
|
|
252
|
W.C. Tsai, C.L. Cheng, T.T.
Chen, Y.F. Chen, Y.S. Huang, F. Firszt, H. Meczynska, A. Marasek, S.
Legowski, and K. Strzalkowski, “Investigation of
degradation in beryllium chalcogenide II-VI semiconductors”, Appl. Phys. Lett., 89, 121918 (2006)
|
|
253
|
G.W. Shu, P.F. Wu, M.H. Lo,
J.L. Shen, T.Y. Lin, H.J. Chang, Y.F. Chen, C.F. Shih, C.A. Chang, and N.
C. Chen, “Concentration dependence of carrier
localization in InN epilayers”, Appl. Phys. Lett.,
89, 131913 (2006)
|
|
254
|
I.J. Chen, and Y.F. Chen, “Nonradiative traps in InGaN/GaN multiple quantum wells revealed
by two wavelength excitation”, Appl. Phys. Lett.,
89, 142113 (2006)
|
|
255
|
G..W. Shu, P.F. Wu, Y.W. Liu,
J.S. Wang, J.L. Shen, T.Y. Lin, P.J. Pong, G.C. Chi, H.J. Chang, Y.F. Chen
and Y.C. Lee, “Effects of rapid thermal annealing
on the optical and electrical properties of InN epilayers”, J. Phys-Condens. Mat., 18, L543 (2006)
|
|
256
|
J.Y. Lin, J.H. Chen, G.H Kim, H. Park, D.H. Youn, C.M Jeon, J.M. Baik, J.L. Lee, C.T.
Liang, and Y.F. Chen, “Magnetotransport
measurements on an AlGaN/GaN two-dimensional electron system”, J. Korean Phys. Soc., 49, 1130 (2006)
|
|
257
|
Y. Sun, W.L. Chen, S.J. Lin,
S.H. Jee, Y.F. Chen, L.C. Lin, Peter T. C. So and C.Y. Dong, “Investigating mechanisms of collagen thermal denaturation by
high resolution second-harmonic generation imaging”,
Biometrical J., 91, 2620 (2006)
|
|
258
|
M.G. Lin, T.L. Yang, C.T.
Chiang, H.C. Kao, J.N. Lee, W. Lo, S.H. Jee, Y.F. Chen, C.Y. Dong, and S.J.
Lin, “Evaluation
of dermal thermal damage by multiphoton autofluorescence and
second-harmonic-generation microscopy”, J Biomed.
Opt., 11, 064006 [06125R] (2006)
|
|
259
|
W. Lo, S.W. Teng, H.Y. Tan, K.H.
Kim, H.C. Chen, H.S. Lee, Y.F. Chen, T.C. So, and C.Y. Dong, “Intact corneal stroma visualization of GFP mouse revealed by
multiphoton imaging”, Microsc. Res. Techniq., 69,
973 (2006)
|
|
260
|
J.S. Wang, S.H. Yu, H.H. Lin,
T.T. Chen, Y.F.Chen, and G.W. Shu, J.L.Shen, R.S. Hsiao, J.F. Chen, and
J.Y.Chi, “Optical and structural properties of
vertically stacked and electronically coupled quantum dots in InAs/GaAs
multilayer structures”, Nanotechnology, 18, 015401
(2007)
|
|
261
|
K.S. Cho, Y.F. Chen, Y.Q. Tang,
and B. Shen, “Photogalvanic effects for interband
absorption in AlGaN/GaN superlattices”, Appl. Phys.
Lett., 90, 041909 (2007)
|
|
262
|
C.M. Wei, T.T. Chen, Y.F.
Chen, Y.H. Peng and C.H. Kuan, “In-plane optical anisotropy
in self-assembled Ge quantum dots induced by interfacial chemical bonds”, Appl. Phys. Lett., 90, 061912 (2007)
|
|
263
|
W.S. Su, Y.F. Chen, C.L. Hsiao
and L.W. Tu, “Generation of electricity in GaN
nanorods induced by piezoelectric effect”, Appl.
Phys. Lett., 90, 063110 [179901] (2007)
|
|
264
|
T.T. Chen, C.L. Cheng, Y. F.
Chen, F.Y. Chang, H.H. Lin, C.T. Wu, and C.H. Chen, “Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum
dots by photoluminescence studies”, Phys. Rev. B,
75, 033310, (2007)
|
|
265
|
C.W. Chen and Y.F. Chen, “Whispering gallery modes in highly hexagonal symmetric
structures of SBA-1 mesoporous silica”, Appl. Phys.
Lett., 90, 071104 (2007)
|
|
266
|
H. J. Chang, T.W. Chen, J.W. Chen,
W. C. Hong, W. C. Tsai, Y. F. Chen, and G.Y. Guo, “Current
and Strain-Induced Spin Polarization in InGaN/GaN Superlattices”, Phys. Rev. Lett., 98, 136403, (2007)
|
|
267
|
L.L. Huang, H.J. Chang, Y.Y.
Chou, C.H. Wang, T.T. Chen, and Y.F. Chen, J.Y. Tsai, S.C. Wang, and H.C.
Kuo, “Optical properties of InGaN quantum dots
grown by SiNx nanomasks”, J. Appl. Phys., 101,
083501, (2007)
|
|
268
|
K. S. Cho, C. T. Liang, Y. F.
Chen, Y. Q. Tang, B. Shen,“Spin-dependent
photocurrent induced by Rashba-type spin splitting in Al0.25Ga0.75N/GaN
heterostructures”, Phys. Rev. B 75, 085327 (2007)
|
|
269
|
M.S. Hu, G.M. Hsu, K.H. Chen,
C.J. Yu, H.C. Hsu, L.C. Chen, J.S. Hwang, L.S. Hong, Y.F. Chen, “Infrared lasing in InN nanobelts”, Appl. Phys. Lett., 90, 123109 (2007)
|
|
270
|
Y.S. Lin, Y. Hung, H.Y. Lin,
Y.H. Tseng, Y.F. Chen and, C.Y. Mou, “Photonic
crystals from monodispersed lanthanide hydroxide silica”, Adv. Mater., 19, 577 (2007)
|
|
271
|
C.C. Wang, C.T. Liang, Y.T.
Jiang, Y.F. Chen, N.R. Cooper, M.Y. Simmons, D.A. Ritchie, “Huge positive magnetoresistance of GaAs/AlGaAs high electron
mobility transistor structures at high temperatures”, Appl. Phys. Lett., 90, 252106 (2007)
|
|
272
|
C.T. Liang, Z.H. Sun, C.L.
Hsiao, M. Z. Hsu, Li-Wei Tu, J.Y. Lin, J.H. Chen, Y. F. Chen and, C. T. Wu,
“Huge positive magnetoresistance in an InN film”, Appl. Phys. Lett., 90, 172101 (2007)
|
|
273
|
T. T. Chen, C. L. Cheng, S.P.
Fu and Y. F. Chen, “Photoelastic effect in ZnO
nanorods”, Nanotechnology, 18, 225705 (2007)
|
|
274
|
Y. H. Huang, C. L. Cheng, T.
T. Chen, Y. F. Chen, and K. T. Tsen, “Studies of
Stokes shift in InxGa1−xN alloys”, J. Appl. Phys., 101, 103521,
(2007)
|
|
275
|
Y. P. Hsieh, J. W. Chen, C.T.
Liang, Y. F. Chen, A. Q. Wang, and C. Y. Mou, “Influence
of the Incorporation of Aluminum on the Optical Properties of MCM-41”, J. Korean Phys. Soc., 50, 1683
(2007)
|
|
276
|
H.J. Chang, Y.P. Hsieh, T.T.
Chen, Y.F. Chen, C.T. Liang, T.Y. Lin, S.C. Tseng, and L.C. Chen, “Strong
luminescence from strain relaxed InGaN/GaN nanotips for highly efficient
light emitters”, Opt. Express, 15, 9357 (2007)
|
|
277
|
K.S. Cho, C.T. Liang, Y.F.
Chen, J.C. Fan, “Demonstration of Rashba spin splitting in an Al0.25Ga0.75N/GaN
heterostructure by microwave-modulated Shubnikov-de Haas oscillations”, Semicond. Sci. Tech., 22, 870 (2007)
|
|
278
|
F.C. Wang, C.L. Cheng, Y.F.
Chen, C.F. Huang, C.C. Yang, “Residual thermal strain
in thick GaN epifilms revealed by cross-sectional Raman scattering and
cathodoluminescence spectra”, Semicond. Sci. Tech.,
22, 896 (2007)
|
|
279
|
K.J. Wu, K.C. Chu, C.Y. Chao,
Y.F. Chen, C.W. Lai, C.C. Kang, C.Y. Chen, P.T. Chou, “CdS nanorods imbedded in liquid crystal cells for smart
optoelectronic devices”, Nano Lett., 7, 1908 (2007)
|
|
280
|
W.S. Su, Y.F. Chen, W.Y. Shih,
H. Luo, W.H. Shih, “Domain switching in lead
magnesium niobate-lead titanate polycrystalline sheets at single grain
level”, Appl. Phys. Lett., 91, 112903 (2007)
|
|
281
|
Y.Q. Tang, B. Shen, X.W. He,
K. Han, N. Tang, W.H. Chen, Z.J. Yang, G.Y. Zhang, Y.H. Chen, C.G. Tang,
Z.G. Wang, K.S. Cho, and Y.F. Chen, “Room temperature
spin-oriented photocuttent under near-infared irradiation and comparison of
optical means with shubnikov de-Haas measurements in AlGaN/GaN
heterostructures”, Appl. Phys. Lett., (accepted)
|
|
282
|
M.C.Wu,C.M. Chuang, H.H. Lo,
K.C. Cheng, Y.F. Chen, and W.F. Su, “Enhancing CdSe
quantum dots photoluminescience from tuning gold surface plasmon resonance
using periodic structured composite thin film”,
Thin Solid Film, (accepted)
|
|
283
|
Y.P. Hsieh, C.T. Liang, and
Y.F. Chen, , “Mechanism of giant enhancement and
quenching of light emission from Au/CdSe nanocomposites”, Nanotechnology, (accepted)
|
|
284
|
S.P. Fu, C.J. Yu, T.T. Chen,
G.M. Hsu, M.J. Chen, L.C. Chen, K.S. Chen, and Y.F. Chen, “Anomalous optical properties of InN nanobelts: evidence of
surface band bending and photoelastic effect”,Adv.
Mater., (accepted)
|
|
285
|
H.Y. Lin, Y.Y. Chou, and Y.F.
Chen, “Giant enhancement of band edge emission
based on ZnO/TiO2 nanocomposites”, Opt. Express,
(accepted)
|
B.
Presentation
at Professional Conferences:
1.
Y. F. Chen, M. Dobrowski,
J.K. Furdyna, ''Determination of Anisotropic Parameter in InSb.'' APS
meeting, March, 1985.
2.
Y. F. Chen, J.C. Wang, B.K.
Tseng, ''An Investigation of Positron Annihilation in a-Si.'' Annual Meeting
of Chinese Physical Society, 1987.
3.
Y.S. Huang, Y. F. Chen,
''Growth and characterization of RuS2 single crystals''. Annual Meeting of
Chinese Physical Society. 1988.
4.
J.H. Hsu, Y. F. Chen, Y.D.
Yao, and C.L. Chien, ''Composition dependence of structural transformation in
FexCu100-x solid solutions''.\newline International Symposium on
non-equilibrium solid phases of metals and alloys, Kyoto, Japan, 1988.
5.
Y.C. Cherng, Y. F. Chen, ''Study
of Hydrogenated Amorphous Silicon Grown by Photo-Chemical Vapor Deposition''
Annual Meeting of Chinese Physical Society, 1989.
6.
W.S. Liang, Y. F. Chen, ''Steady-State
Photocarrier Grating Technique for Diffusion Length Measurement in
Semiconductors'' Annual Meeting of Chinese Physical Society,
1989.
7.
Y. F. Chen, ''Magnetoelectric
effects in InSb'', Symposium onIII-V compound semiconductors, Hsin-Chu,
Taiwan, 1989.
8.
Y. F. Chen, ''Persistent
photoconductivity in a-Si:H multiple quantum wells'', Symposium on semiconductor
multiple quantum well physics and devices. Taipei, Taiwan, 1990.
9.
Y. F. Chen, ''Anisotropy of
spin-resonance position in p-type InSb inversion layer'', Symposium on III-V
compound semiconductors. Hsin-Chu, Taiwan, 1990.
10.
Y.M. Hsu, T.C. Hen, C.J. Chen,
Y.H. Chang, and Y. F. Chen, Magneto-transport studies of subband Landau Level
compling in GaAs/AlGaAs heterostructure, Annual Meeting of Chinese Physical
Society, 1992.
11.
T.Y. Lin, and Y. F. Chen,
''Hydrogenation of InP on GaAs by the photochemical vapor deposition
system'', Annual Meeting of Chinese Physical Society, 1992.
12.
I.M. Chang, and Y. F. Chen,
''Influence of hydrogen passivation of Hg0.8Cd0.2Te'', Annual Meeting of
Chinese Physical Society, 1992.
13.
Y. F. Chen, J.L. Shen, and
L.Y. Lin'' Photothermal luminescence and dual-beam photoluminescence: their
application to the study of energy levels in GaAs/AlxGa1-xAs quantum wells'',
Nordita Research Workshop on nanometer structures and mesoscopic physics,
Trondheim, Norway, 1992.
14.
Y. F. Chen, ''Hydrogenation
in crystalline semiconductors by photo-chemical vapor deposition method'',
International Conference on Physics of Semiconductors, Beijing, China, 1992.
15.
Y. F. Chen, J.L. Shen, and
L.Y. Lin '' Observation of standing-wave formation in GaAs/AlxGa1-xAs quantum
wells by photothermal luminescence spectroscopy'', Annual Meeting of Chinese
Physical Society,1993.
16.
J.L. Shen, Y. F. Chen
''Far-infrared magnetophotoconductivity studies of GaAs/AlxGa1-xAs quantum
wells'', Annual Meeting of Chines PhysicalSociety, 1993.
17.
I.M. Chang, Y. F. Chen
''Optical studies on porous silicon'', Annual Meeting of Chinese Physical
Society, 1993.
18.
M.Y. Tsay, Y.S. Huang, Y. F.
Chen ''Photoconduction of synthetic pyrite crystals'', Annual Meeting of
Chinese Physical Society, 1993.
19.
S.Z. Chang, S.C.Lee, J.L.
Shen, and Y. F. Chen ''Magneto-optical studies of highly mismatched
InxGa1-xAs on GaAs by molecular beam epitaxy'' Symposium on compound
semiconductors, National Central Univ. Chung-Li, Taiwan, 1993.
20.
J.L. Shen, S.Z. Chang, S.C.
Lee, and Y. F. Chen, ''Study of asymmetric broadening of Raman scattering in
InxGa1-xAs/InP and InxGa1-xAs/GaAs epilayers'' Sixth International Conference
on InP and related materials, Santa Barbara, CA, USA, 1994.
21.
I.M. Chang, and Y. F. Chen,
''Study of grown of photoluminescence under laser light illumination'',
Annual Meeting of Chinese Physical Society, 1994.
22.
L.H. Chu and Y. F. Chen,
''Persistent photoconductivity in Si0.86Ge0.14'', Annual Meeting of Chinese
Physical Society, 1994.
23.
Y.S. Yuang, and Y. F. Chen,
''Time-resolved measurements of photoluminescence in CdS and CdSe
semiconductor-doped glasses'', Annual Meeting of Chinese Physical Society,
1994.
24.
Y. Y. Lee, and Y. F. Chen,
''Photoinduced absorption of p-doped a-Si:H studied by photothermal
deflection spectroscopy'', Annual Meeting of Chinese Physical Society, 1994.
25.
Y. F. Chen, J. L. Shen, ``
Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown
on InP coated GaAs substrates'' Annual meeting of Chinese Physical Society,
1995.
26.
J. L. Shen, Y. F. Chen,
``Effective-mass studies of lattice-mismatched InxGa1-xAs epilayers on GaAs
and InP substrates'', Annual meeting of Chinese Physical Society, 1995.
27.
S. S. Kuo, F. R. Chen, W. C.
Chou, A. Twardowski, and Y. F. Chen, ``Optical studies in the diluted
magnetic semiconductors'', Annual meeting of Chinese Physical Society, 1995.
28.
M. C. Liao, Y. H. Chang, and
Y. F. Chen, ``The growth of ZnSe epilyer on GaAs (100) by MOCVD'', Annual
meeting of Chinese Physical Society, 1995.
29.
J. W. Chen, J. C. Wang, and
Y. F. Chen, ``Capacitance studies of Nd2CuO4'', Taiwan International
Conference on Superconductivity, 1995.
30.
J. W. Chen, T. Y. Wang, J. C.
Wang, and Y. F. Chen, ``Dielectric properties of Y2Cu2O5+δ'', Taiwan International Conference on Superconductivity, 1995.
31.
I. Lo, J. P. Chen, and Y. F.
Chen, ''Effective mass of two-dimensional electron gas in δ-doped AlInAs/GaInAs quantum wells'', Annual meeting of Chinese
Physical Society, 1996.
32.
C. C. Huang, I. M. Chang, Y.
F. Chen, and P. K. Tseng, ''Positron-annihilation studies of porous
silicon''. Annual meeting of Chinese Physical Society, 1996.
33.
Y. F. Chen, Y. T. Dai, and I.
Lo, ''Observation of double cyclotron resonance in modulation-doped InAlAs/InGaAs
heterostructure by optical detection'', The 29th Seminar in Science and
Technology-Optoelectronics'' Tokyo, Japan, 1996.
34.
K. H. Chen, C. H. Chao, T. J.
Chuang, Y. J. Yang, L. C. Chen, C. K. Chen, Y. F. Huang, C. H. Yang, H. Y.
Lin, I. M. Chang, and Y. F. Chen, ''GaN growth by nitrogen ECR-CVD method'',
MRS meeting, San Francisco, USA, 1996.
35.
M. S. Tsia, T. Y. Lin, C. F.
Huang, Y. F. Chen, C. F. Lin, G. C. Chi, and F. F. Fang, ''The transport
property of 2DEG in GaN/AlGaN heterostructures'' Photonics, Hsinchu, Taiwan,
1996.
36.
Y. T. Dai and Y. F. Chen,
''Photoluminescence and photothermal deflection spectroscopy in InAs quantum
dots ''Annual meeting of Chinese Physical Society, 1997.
37.
J. C. Fan and Y. F. Chen,
''Anomalous optical and electric properties in InGaAsP quantum wells'' Annual
meeting of Chinese Physical Society, 1997.
38.
M. S. Tsai, T. Y. Lin, Y. F.
Chen, and F. F. Fang, ''The transport property of 2DEG in GaN/AlGaN
heterostructures'' Annual meeting of Chinese Physical Society, 1997.
39.
T. Y. Lin, M. S. Tsai, Y. F.
Chen, and F. F. Fang, ''Magnetic field induced metal-insulator-metal
transition in p-type Si/SiGe heterojuctions'' Annual meeting of Chinese
Physical Society, 1997.
40.
M. C. Liao, Y. H. Chang, Y.
F. Chen, and J. W. Hsu, ''Fabrication of ZnSe quantum dots under Volmer-Weber
mode by metalorganic chemical vapor deposition'' Annual meeting of Chinese
Physical Society, 1997.
41.
J. C. Wang, J. W. Chen, and
Y. F. Chen, ''Dielectric properties of Gd2CuO4'' Annual
meeting of Chinese Physical Society, 1997.
42.
T. Y. Lin, M. S .Tsai, Y. F.
Chen and F. F. Fang, ''Magnetic field induced anomalous phase transition in
p-type Si/SiGe heterostructures'', The Second Joint Meeting of the World-Wide
Chinese Physicists, Taipei, Taiwan, 1997
43.
H. Y. Wang, S. C. Huang, J. R.
Gong, T. Y. Lin, Y. F. Chen, C. I. Chiang and S. L. Tu, ''Growth of GaN films
on (0001) sapphire substrates by atomic layer epitaxy using hydrogen carrier
gas'', Electronic devices and materials symposium, Chun-Li, Taiwan, 1997.
44.
J. H. Hsu, M. Y. Chern and Y.
F. Chen, '' Effect of hydrogen on the interlayer coupling of Fe/Si
multilayered films', Internation conference on magnetism and magnetic
materilas, Melboume, Australia, 1997.
45.
D. Y. Lin, S. H. Liang, Y. S.
Huang, K. K. Tiong, Y. T. Dai, and Y. F. Chen, '' Spectroscopic studies of
the effects of surface segregation of In atoms on GaAlAs/InGaAs/GaAs high
electron mobility transistor'', Optics and photonics, HsinChu, R.O.C. 1997
46.
L.
C. Chen, C. K. Chen, D. M. Bhusari. K. H. Chen, Y. F.
Chen, and Y. S. Huang, MRS meeting, San Francisco, U. S. A., 1997
47.
T. Y. Lin, J. C. Fan and Y.
F. Chen, '' Alloy potential fluctuationins in InGaN'' Annual meeting of
Chinese Physical Society, 1998.
48.
L. J. Tsai, and Y. F. Chen,
'' Observation of persistent photoconductivity in SiGe/Si quantum wells'',
Annual meeting of Chinese Physical Society, 1998.
49.
J. C. Fan, and Y. F. Chen,
''Observation of persistent photoluminescence in porous silicon'', Annual
meeting of Chinese Physical Society, 1998.
50.
H. Z. Yang, and Y. F. Chen ''
Photoluminescence study of InAs/InGaAs quantum wells'', Annual meeting of
Chinese Physical Society, 1998.
51.
M. C. Liao, Y. H. Chang, and
Y. F. Chen, ''Fabrication and characterization of ZnSe quantum dots'', Annual
meeting of Chinese Physical Society, 1998.
52.
K. Hong, and Y. F. Chen,
''Fabrication and characterization of InSb dots on GaAs by laser ablation'',
Annual meeting of Chinese Physical Society, 1998.
53.
J. S. Wang, H. H. Lin, T. Y.
Lin, Y. F. Chen, W. K. Hung, and M. Y. Chern, '' Epitaxial growth of the GaN
film on (0001) sapphire by RF atomic nitrogen plasma assisted gas source
molecular beam epitaxy'', International Electron Devices and Materials
Symposia, 20-23 Dec. 1998, Taiwan, B1-2-P.11
54.
K. T. Hung, P. K. Tseng, Y.
F. Chen, S. Y. Lin, W. F. Huang, '' Studies of internal surfaces of zeolites
by 2D-ACAR'', Annuel meeting of Chinese Physical Society, 1999.
55.
J. W. Fan, L. C. Lin, K. S.
Chen, and Y. F. Chen, '' Wide band gap silicon carbon nitride films deposited
by ECR-CVD'', Annuel meeting of Chinese Physical Society, 1999.
56.
W. K. Hung, M. Y. Chern, J.
C. Fan, T. Y. Lin, and Y. F. Chen, '' Pulsed laser deposition of GaAsN on
GaAs'', Annuel meeting of Chinese Physical Society, 1999.
57.
J. C. Fan, Y. F. Chen, M. C.
Chen, and H. H. Lin, '' Photoconductivity study of above-barrier states in
GaAs-AlGaAs multiple quantum wells'', Annuel meeting of Chinese Physical
Society, 1999.
58.
T. Y. Lin and Y. F. Chen, '
Optical quenching of the photoconductivity phenomena in n-type GaN'', Annuel
meeting of Chinese Physical Society, 1999.
59.
D. R. Hang and Y. F. Chen, '
Observation of positive and negative persistent photoconductivity in two-side
doped InGaAs/AlInAs quantum wells'', Annuel meeting of Chinese Physical
Society, 1999.
60.
J. S. Sue, Y. F. Chen, and K.
C. Chiu, ' The dielectric properties of C60 films'', Annuel
meeting of Chinese Physical Society, 1999.
61.
C. H. Chen and Y. F. Chen, ''
Optical properties of n-type porous silicon obtained by photoelectrochemical
etching'', Annuel meeting of Chinese Physical Society, 1999.
62.
F. C. Hsu, J. C. Fan, Y. F.
Chen, M. C. Chen, C. W. Shie, and H. H. Lin, ' Thermalization and many-body
effects in self- organized InAs/GaAs quantum dots by photoluminescence
measurements'', Annuel meeting of Chinese Physical Society, 1999.
63.
W. C. Wang, L. C. Tsai, J. C.
Fan, Y. F. Chen, and I. Lo, ' Positive and negative persistent
photoconductivities in semimetallic AlGaSb/InAs quantum wells.'', Annuel
meeting of Chinese Physical Society, 1999.
64.
Y. H. Chang and Y. F. Chen,
'' Growth and characterization of ZnSe and ZnTe quantum dots', American
Physical Society, March Meeting, Atlanta, 1999.
65.
T. Y. Lin and Y . F. Chen, ''
Optical quenching of the photoconductivity in n-type GaN', American Physical
Society, March Meeting, Atlanta, 1999.
66.
Y. F. Chen and J. C. Fan, ''
Enhancement of effective mass in III-V compouds induced by chemical
disorder'', American Physical Society, March Meeting, Atlanta, 1999.
67.
Y. F. Chen, '' Recent
development in GaN-based materials'', Third conference of Overseas Chinese
Physical Association, Atlanta, U.S.A., 1999.
68.
Y. F. Chen and T. Y. Lin, ''
Exciton localization and Stokes' shift in undoped InGaN/GaN quantum wells'',
Optoelectronics 2000, San Jose, California, U.S.A., 2000
69.
Y. F. Chen, H. C. Yang, and
T. Y. Lin, “Evidence of lumienescence from In
Clusters in InGaN/GaN quantum wells”, the 2nd
nanostructural materials conference, Taipei, Taiwan, 2000.
70.
S. M. Lin, and Y. F. Chen, “The dielectric properties of ZnMnCdTe alloys”, Annual meeting of Chinese Physical Society, 2000.
71.
Z. W. Chang and Y. F. Chen, “Optical studies of ZnMgSeS/ZnSe quantum wells”, Annual meeting of Chinese Physical Society, 2000.
72.
W. M. Chen and Y. F. Chen, “Optical properties of InGaP and InAlP thin films”, Annual meeting of Chinese Physical Society, 2000.
73.
H. C. Yang and Y. F. Chen, “Evidence of lumienescence from In Clusters in InGaN/GaN quantum
wells” Annual meeting of Chinese Physical Society,
2000.
74.
Z. L. Yang, Y. S. Huang, W.
K. Huang, and Y. F. Chen,”Piezoelectric modulation
spectroscopy in GaAsN alloys ” Annual meeting of
Chinese Physical Society, 2000.
75.
Y. F. Chen, H. C. Yang, and
T. Y. Lin, “Luminescence mechanism in InGaN/GaN
quantum wells” The 8th Asia Pacific
Physics Conference, Taipei, Taiwan, 2000.
76.
M.F. Yue, Y. F. Chen, “Optoelectronic properties of GaAsN epitaxial layers” Annual Meeting of Chinese Physical Society, 2001.
77.
D.R. Huang, Y. F. Chen, “AlxGaxN/GaN band offsets determined by deep-level emission” Annual Meeting of Chinese Physical Society, 2001.
78.
C.H. Chen, Y. F. Chen, “Investigation of nondegrading photoluminescence in porous silicon
by deuterium plasma treatment” Annual Meeting of
Chinese Physical Society, 2001.
79.
G.H. Huang, K.H. Chen, L.C.
Chen and Y. F. Chen, “Growth mode of oriented indium
nitride platelets observed via lateral epitaxy”
Annual Meeting of Chinese Physical Society, 2001.
80.
C.T. Liang, Y. F. Chen, “Quantum magneto-transport in two-dinansional GaAs electron gases
and SiGe hole gases:, Annual Meeting of Chinese Physical Society, 2001.
81.
W.K. Hung, Y. F. Chen, ”Optical properties of ZnMnSe alloys” Annual
Meeting of Chinese Physical Society, 2001.
82.
I.S. Jang, S. Cattopadhyay,
K.H. Chen, L.C. Chen, and Y. F. Chen, “Field emission
properties of one dimensiond nano-structures on different substrates” Annual Meeting of Chinese Physical Society, 2001.
83.
S.M. Tzeng, Y. F. Chen, Y.T.
Cheng, C.W. Hsu, and Y.S. Huang, “Observation of
quasibound seates in type-II ZnTe/CdSe superlatives”
Annual Meeting of Chinese Physical Society, 2001.
84.
J.Y. Peng, Y. F. Chen, L.C.
Chen, and C.C. Yeh, “Photoluminescance spectra of GaN
nanowires grown by Vapor-liquid-solid method” Annual
Meeting of Chinese Physical Society, 2001.
85.
Y.Y. Ke and Y. F. Chen, “Growth and postgrowth rapid annealing of InAsN/InGaAs single
quantum well on InP” Annual Meeting of Chinese
Physical Society, 2001.
86.
H.J. Chang, Y. F. Chen, H.P.
Lin, and C.Y. Mou, “Strong visible photoluminescence
from SiO2 nanotubes at room temperature” Annual
Meeting of Chinese Physical Society, 2001.
87.
Y. F. Chen, “Optoelectronic properties of nanostructured nitride semicenductors” International Nanotechnology Form, Hsin-Tsu, Taiwan, 2001.
88.
Y. F. Chen, “Mechanism and improvement of luminescence in InAsN/InGaAs quantum
wells” International Narrow Gap Nitride Workshop,
Singapore, 2001.
89.
C.H. Chen, Y. F. Chen, H.X.
Jiang, and L.Y. Lin, “ Mechanism of enhanced
luminescence in InAlGaN”, March Meeting, American
Physical Society, U.S.A.,2002
90.
D.R. Hang, Y. F. Chen, and
H.H.Lin, “Electronic and optical properties of
InAsN/InGaAs single quantum well”, March Meeting,
American Physical Society, U.S.A.,2002
91.
C.T. Liang, C.H.Pao,C.C.Lee,
T.Y. Huang, and Y. F. Chen, “Spin-dependent transport
in a low-dimensional GaAs electron system, Annual meeting of Chinese Physical
Society, 2002.
92.
Y.M. Cheng, C.T, Liang, C.F. Huang,
T.Y. Huang, Y.H. Chang, and Y.F.Chen, “Magnetic-field-induced
phase transitions in a Si/SiGe hole system”, Annual
meeting of Chinese Physical Society, 2002
93.
C.H. Chen, L.Y. Hung, and Y. F. Chen, “ Mechanism of enhanced luminescence in InAlGaN quaternary alloys”, Annual meeting of Chinese Physical Society, 2002
94.
M.H. Ya, and Y.F.Chen, “Optoelecronic properties in GaNAs epitaxial layers and single
quantum wells”, Annual meeting of Chinese Physical
Society, 2002
95.
W.K. Hung, K.S.Cho, and Y. F.
Chen, “Elecronic properties of InNAs alloy grown by molecular
beam epitax”, Annual meeting of Chinese Physical
Society, 2002
96.
W.S.Su, M.H.Ya, Y.S. Chiu,
and Y.F.Chen, “Polarization dependence in type-II
ZnTe/CdSe mutiple quantum wells by photoluminescence and photoconductivity”, Annual meeting of Chinese Physical Society, 2002
97.
C.H. Weng, Y. F. Chen, H.P.
Lin, and C.Y.Mou, “Photoluminescence mechanism of
MCM-41 particles”, Annual meeting of Chinese Physical
Society, 2002
98.
S.p.Fu, Y.F.Chen, and J.C.
Wang, “Dielectric Studies of ZnMnTe epilayers”,Annual meeting of Chinese Physical Society, 2002
99.
Y.L. Chen, Y. F. Chen, C.C.
Chen, and M.Y. Yu,”Photoluminescence and Roman
spectroscopy of GaP and GaN nanowires”, Annual
meeting of Chinese Physical Society, (2002)
100.
J.S. Wu, Y.F.Chen, K.H.Chen,
and L.C.Chen, “Gold Silcide nanocrystals in silicon
oxide nanowires”. Annual meeting of Chinese Physicl
Society, (2002)
101.
D.R. Hang, Y. F. Chen, and
C.F. Huang, “Electrically detected and
microwave-modulated magnetotransport measurements on two-subband-populated
AlGaN/GaN heterostructres”, MRS meeting, Boston USA
(2002)
102.
C.C. Chen, and Y. F. Chen, “Novel properties of GaN/AlGaN quantum wells”, ISBLLED, Madrid, Spain (2002)
103.
W.K. Hung, D.R. Hang, M.Y.
Chern, Y. F. Chen, “Electronic properties of InNAs
alloys studied by spectroscopic ellipsometry ”,
Annual meeting of Chinese Physical society, (2003)
104.
J.R. Juang, T.Y. Huang, T.M.
Chen, M.G. Lin, C.T. Liang, D.R. Hang, and Y. F. Chen, “Transport in a gated AlGaN/GaN electron system”, Annual meeting of Chinese Physical Society, (2003)
105.
D.R. Hang, and Y. F. Chen, “Microwave modulated magnetotransport in AlGaN/GaN heterostructure”, 5th International Conference on Nitride
Semiconductors, Kyoto, Japan (2003)
106.
Y. F. Chen, “Some highlight of experimental works in Taiwan”, Symposium in honor of Prof. J.K. Furdyna’s 70th Birthday, Notre Dame, USA (2003)
107.
Y. F. Chen, “Mechanism of enhanced luminescence in InAlGaN”, Ninth International Conference on Composites Engineering, San
Diego USA (2003)
108.
Y. F. Chen, “Optical properties of InN epifilms”, First
International Workshop on InN, Singapore (2003)
109.
Y. F. Chen, “Giant optical anisotropy in CdSe/ZnTe type II heterostructure
induced by interface chemical bonds”, International
Conference on II-VI compounds, Buffalo, New York (2003)
110.
J.S. Hwang, K.H. Chen, Y. F.
Chen, and M.C. Lin, “Unification of controversial InN
band gap through quantum confinement effect”, Annual
Meeting of Chinese Physical Society (2004)
111.
Y. F. Chen, “Enhanced optical properties from nanostructed semiconductors”, Annual Meeting of Chinese Physical Society (2004)
112.
M.G. Lin, C.T. Liang, and Y.
F. Chen, “Microwave-modulated Shubnikov-de Hass-like
oscillations in an AlGaN/GaN electron system”, Annual
Meeting of Chinese Physical Society (2004)
113.
J.P. Chang, T.Y. Lin, J.L.
Shen, and Y. F. Chen, “Effects of piton irradiation
on GaN-based materials”, Annual Meeting of Chinese
Physical Society (2004)
114.
C.P. Huang, C.T. Liang, Y. F.
Chen, and D.A. Ritchie, “On the low-field
insulator-quantum Hall conductor transitions”, Annual
Meeting of Chinese Physical Society (2004)
115.
C.C. Chang, Y.H. Chang, Y. F.
Chen, and J.K. Furdyna, “Effect of hydrogen
passivation on the properties of GaMnAs ferromagnetic semiconductors”, Annual Meeting of Chinese Physical Society (2004)
116.
C.F. Lin, J.C. Fan, K.E.
Shiou, and Y. F. Chen, “Enhanced sensitivity of photo
thermal deflection spectroscopy by photo induced absorption and the Michelson
interfere once method”, Annual Meeting of Chinese
Physical Society (2004)
117.
H. C. Kuo, S.C. Wang, and Y.
F. Chen, “Effect of Sb incorporation on optical
properties of InGaAsN/GaAsN grown by MOCVD”, Annual
Meeting of Chinese Physical Society (2004)
118.
T.Y. Huang, C.T. Liang and Y.
F. Chen, “Direct measurement of the spin gaps in a
gated GaAs two-dimensional electron gas”, Annual
Meeting of Chinese Physical Society (2004)
119.
I.S Chen, Y.C. Wang, J.C.
Fan, K.J. Hsiao, and Y. F. Chen, “Thermally
stimulated current in self-organized InAs quantum dots”, Annual Meeting of Chinese Physical Society (2005)
120.
M.F. Shih, Y.I. Huang, Y.M.
Chang, Y. F. Chen, and Ikai Lo, “Transport and
photoluminescence studies of semi-metallic GaSb/InAs system”, Annual Meeting of Chinese Physical Society (2005)
121.
C.C. Chang, P. Yang, C.S.
Lee, Y.H. Chang, and Y. F. Chen, “Optical and
transport studies of ferromagnetic GaMnAs semicanduters”, Annual Meeting of Chinese Physical Society (2005)
122.
Y. F. Chen, “Optical enhancement in nanostructured semiconductors”, Annual Meeting of Chinese Physical Society (2005)
123.
H.J. Chang, C.H. Chen, L. Y.
Huang, Y. F. Chen, and T. Y. Lin, “In-plane optical
anisotropy in InGaN quantum wells by Pockels effect”,
Annual Meeting of Chinese Physical Society (2005)
124.
M.G. Lin, Y. F. Chen, and
C.T. Liang, “Amplitude dependence in
microwave-assisted shubnikov-de Haas oscillations”,
Annual Meeting of Chinese Physical Society (2005)
125.
S.C. Chen, P.H. Chang, C.T.
Liang, and Y. F. Chen, “Transport measurements on
MOVPE-grown InN and InGaN films”, Annual Meeting of
Chinese Physical Society (2005)
126.
H.T. Chang and Y. F. Chen, “Pockels effect in InGan/GaN quantum wells”,
March Meeting of American Physical Society, Los Angels, USA (2005)
127.
S.Y. Hsia, and Y. F. Chen, “Giant enhancement of photoluminescence by second harmonic surface
plasma resonance”, March Meeting of American Physical
Society, Los Angels, USA (2005)
128.
W.S. Su, and Y. F. Chen, “Light-induced dectrostatic force microscope in InN epifilms”, March Meeting of American Physical Society, Los Angels, USA
(2005)
129.
H. Q. Fu, and Y. F. Chen, “Finding largest full gap in two-dimensional photonic crystals”, March Meeting of American Physical Society, Los Angels, USA
(2005)
130.
Y.F. Chen, “Giant band gap emission stimulated by defect loss”, International conference on composites/Nano Engineering,
Colorado, USA (2006)
131.
Y.F. Chen, “Novel optical properties of semiconductor nanocomposites”, International workshop on nanomaterials and magnetics, Taipei,
Taiwan (2006)
132.
Y.F. Chen, “Novel optical properties of semiconductor nanocomposites”, Workshop of nanomaterials microscope and optics, Taipei, Taiwan
(2006)
133.
S.H. Yu, J.S. Wang, T.T.
Chen, Y.F. Chen, and J.Y. Chi, “Optical properties of
vertical coupled InAs/GaAs quantum dots”, Annual
Meeting of Chinese Physical Society (2006)
134.
C.T. Liang, C.F. Huang, Y.H.
Chang, Y.F. Chen, Hun Park, and D.A. Ritchie, “Experimental
evidence for phase transitions in two dimensions”,
Annual Meeting of Chinese Physical Society (2006)
135.
D.Z. Chen, J.Y. Lin, C.T.
Liang, Y.F. Chen, M.Y. Simmons, and D.A. Ritchie, “Studies
of electron heating in GaAs/AlGaAs heterostructure at low temperatures using
shubnikov-de Haas oscillations”, Annual Meeting of
Chinese Physical Society (2006)
136.
J.Y. Lin, C.T. Liang, and
Y.F. Chen, “Magneto transport measurements on an
AlGaN/GaN two-dimensional electron system”, Annual
Meeting of Chinese Physical Society (2006)
137.
J.H. Chen, C.T. Liang, and
Y.F. Chen, “Experimental evidence for Boltzmann-Drude
transport-like behavior in an GlGaN/GaN two-dimensional electron system”, Annual Meeting of Chinese Physical Society (2006)
138.
J.Y. Lin, C.T. Liang, and
Y.F. Chen, “Electron-electron interactions in an
AlGaN/GaN two-dimensional electron system”, Annual
Meeting of Chinese Physical Society (2006)
139.
Y..X. Chiu, Y.T. Jiang, C.T.
Liang, and D.A. Ritchie, “Large positive
magnetoresistence in high-mobility two-dimensional electron systems at high
temperatures”, Annual Meeting of Chinese Physical
Society (2006)
140.
Y.L. Chou, Y.F. Chen, and
Y.M. Chang, “The development of transient absorption
spectroscopy using supercontinuum generation of photonic crystal fiber as the
light source”, Annual Meeting of Chinese Physical
Society (2006)
141.
K.C. Chu, C.Y. Chao, and Y.F.
Chen, “Electrially controlled surface Plasmon
resonance spectra of gold nanorods”, Annual Meeting
of Chinese Physical Society (2006)
142.
S.P. Fu, T.J. Lin, and Y.F.
Chen, “Optical properties of hydrogen-plasma treated
InN thin films”, Annual Meeting of Chinese Physical
Society (2006)
143.
W.S. Su, C.W. Lu, and Y.F.
Chen, “Electrostatic force spectroscopy: Application
to local electronic transitions in InN epifilms”,
Annual Meeting of Chinese Physical Society (2006)
144.
H.Y. Lin, Y.F. Chen, and C.C.
Chen, “Carrier transfer induced photoluminescence
enhancement change in metal-semiconductor core-shell nanostructures”, Annunal Meeting of Chinese Physical Society (2006)
145.
K.S. Cho, and Y.F. Chen, “Magneto-optical properties of AlGaN/GaN single quantum well”, Annual Meeting of Chinese Physical Society (2006)
146.
Y.F. Chen, “Novel optical properties of semiconductor nanocomposites”, OPT 2006 (2006)
147.
W. Hung, D. R. Hang, D. Liu,
M. Chern, Y.F. Chen, D. Shih, and H. Lin, “Optical
studies of dilute InNAs grown by molecular beam epitaxy”, MBE 2006, Tokyo, Japan (2006)
148.
Y.P. Hsieh, J.W. Chen, H.Y.
Lin, C.T. Liang, and Y.F. Chen, “Influence of the
incorporation of metals on the optical properties of MCM-41”,
ISPSA 2006, Jeiu, Korea (2006)
149.
Y.F. Chen, “Liquid crystals device with build-in solar cells”, Annal Meeting of Chinese Physical Society (2007)
150.
Y.F. Chen, “Carrier relaxation dynamics in II-VI semiconductor quantum dots”, San Jose, California USA (2007)
C.
Invited
Talks at Professional Conferences:
1.
Y. F. Chen, ''Interference of
magnetic-dipole and electric-dipole in semiconductors.'' The 6th ROC-ROK
symposium on condensed matters and statistical physics, Taipei, Taiwan, 1990.
2.
Y. F. Chen, ''Hydrogen in
crystalline semiconductors.'' Annual meetiong of Chinese Physical Society,
TamKang University, Tamsui, Taiwan, 1991
3.
Y. F. Chen, 'Connection
between mayer-neldel rule and stretched-exponential relaxation'', symposium
on Trends in Condensed Matter and Applied Physics, National Taiwan
University, Taipei, Taiwan, 1991
4.
Y. F. Chen, ''Hydrogenation
in crystalline semiconductors by photo-chemical vapor deposition method',
International Conference on Physics of Semiconductors, Beijing, China, 1992.
5.
Y. F. Chen, J. L. Shen, and
L. Y. Lin, ''Photothermal luminescence and dual-beam photoluminescence: their
application to the study of energy levels in GaAs/AlxGa1-xAs
quantum wells'' The second Taiwan-Japan Workshop on Solid-State Optical
Spectroscopy, Osaka, Japan, 1992.
6.
Y. F. Chen, J. L. Shen, and
L. Y. Lin, ''Photothermal luminescence and dual-beam photoluminescence: their
application to the study of energy levels in GaAs/AlxGa1-xAs
quantum wells'' Seoul International Symposium on the Physics of
Semiconductors and Applications, Seoul, Korea, 1992.
7.
Y. F. Chen, J. L. Shen, and
L. Y. Lin, ''Observation of standing-wave formation in GaAs/AlxGa1-xAs
quantum wells by photothermal luminescence'',Annual meetiong of Chinese
Physical Society, National Chung Cheng University, Chia-Yi, Taiwan, 1993
8.
Y. F. Chen, ''Hydrogenation
in crystalline semiconductors by photo-chemical vapor deposition method',
International Symposium on Surface and Thin Film Science, Academic Sinica,
Taipei,Taiwan,1993
9.
Y. F. Chen, and J. L. Shen ''
Photoluminescence study of mismatched In0.53Ga0.47As
epilayers qrown on InP coated GaAs substrated'' Annual Meeting of Chinese
Physical Society, National Sun Yat-Sen University, Kaohsing, Taiwan, 1995
10.
Y. F. Chen, ''Some
experimental works on semiconductor physics.'' Symposium on Contemporary
Physics, Taipei, Taiwan, 1996
11.
H. M. Chen and Y. F. Chen, ''
Yellow luminescence in n-type GaN films'', Annual Meeting of Chinese Physical
Society, National Central University, Chunh-Li, Taiwan, 1998
12.
H. M. Chen and Y. F. Chen, ''
Metastability of defects in GaN epitaxial films'', Progress in
Electromagnetic Research Symposium, National Central University, Chunh-Li,
Taiwan, 1999
13.
Y. F. Chen, '' Recent
development in GaN-based materials'' Third conference of Overseas Chinese
Physical Association, Atlanta, U.S.A., 1999
14.
Y. F. Chen, '' Application of
optical detected cyclotron resonance in semiconductors'', 7th internation
Workshop and School: nonlinear dynamics and complex system, Minsk, Belarus,
1999
15.
Y. F. Chen and T. Y. Lin, “Exciton localization and Stokes’ shift in
undoped InGaN/GaN quantum wells”, Optoelectronics
2000, San Jose, Colifornia, USA., 2000
16.
Y. F. Chen, H. C. Yang, and
T. Y. Lin, “Luminescence mechanism in InGaN/GaN
quantum wells” The 8th Asia Pacific
Physics Conference, Taipei, Taiwan, 2000.
17.
Y. F. Chen, H. C. Yang, and
T. Y. Lin, “Evidence of lumienescence from In
Clusters in InGaN/GaN quantum wells”, the second
nanostructural materials conference, Taipei, Taiwan, 2000.
18.
Y. F. Chen, “Mechanism and improvement of luminescence in InAsN/InGaAs quantum
wells” International Narrow Gap Nitride Workshop,
Singapore, 2001.
19.
Y. F. Chen, “Optoelectronic properties of nanostructured nitride semiconductors” International Nanotechnology Form, Hsin-Tsu, Taiwan, 2001.
20.
Y. F. Chen, “Localization induced luminescence and many body effects in Si MOS
structure”, The 8th IUMRS International
Conference on Electronic Materials”, Xi’an, China, 2002.
21.
Y. F. Chen, “Some highlight of experimental works in Taiwan”, Symposium in honor of Prof. J.K. Furdyna’s 70th Birthday, Notre Dame, USA (2003)
22.
Y. F. Chen, “Mechanism of enhanced luminescence in InAlGaN”, Ninth International Conference on Composites Engineering, San
Diego USA (2003)
23.
Y. F. Chen, “Optical properties of InN films”, First
International Workshop on InN, Singapore (2003).
24.
Y. F. Chen, “Optical properties in nanostructured semiconductors”, Annual Meeting of Chinese Physical Society (2004)
25.
Y. F. Chen, “Optical enhancement in patterned semiconductors”, Annual Meeting of
Chinese Physical Society (2005)
26.
Y.F. Chen, “Giant band gap emission stimulated by defect loss”, International conference on composites/Nano Engineering,
Colorado, USA (2006)
27.
Y.F. Chen “Novel optical properties of semiconductor nanocomposites”, International workshop on nanomaterials microscope and optics,
Taipei, Taiwan (2006)
28.
Y.F. Chen “Novel optical properties of semiconductor nanocomposites”, Workshop on nanomaterials and magnetics, Taipei, Taiwan (2006)
29.
Y.F. Chen “Novel optical properties of semiconductor nanocomposites”, OPT 2006, Hsin-Chu, Taiwan (2006)
30.
Y.F. Chen “Liquid crystals devices with build-in solar cells”, Annual Meeting of Chinese Physical Society (2007)
31.
Y.F. Chen, “Carrier Relaxation Dynamics in II-VI semiconductor quantum dots”, Photonic West, San Jose, California USA (2007)
D.
Patens Right:
1.
Crystalline SiCN with a
direct optical band gap of 3.8eV, U.S. patent 5935705 (1999).
2.
A new wide-band gap
semiconductor: SiCN, ROC patent 451499 (2001).
|